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MEMS-based LC tank with extended tuning range for low phase-noise VCO

Published online by Cambridge University Press:  29 October 2015

Alessandro Cazzorla ,
Paola Farinelli ,
Laura Urbani ,
Fabrizio Cacciamani ,
Luca Pelliccia ,
Roberto Sorrentino ,
Flavio Giacomozzi  and
Benno Margesin
Alessandro Cazzorla*
Affiliation:
Department of Engineering, University of Perugia, Via G. Duranti, 93, 06125, Italy. Phone: +39 0755853666
Paola Farinelli
Affiliation:
RF Microtech, Via Mascagni, 11, 06132, Italy
Laura Urbani
Affiliation:
RF Microtech, Via Mascagni, 11, 06132, Italy
Fabrizio Cacciamani
Affiliation:
RF Microtech, Via Mascagni, 11, 06132, Italy
Luca Pelliccia
Affiliation:
RF Microtech, Via Mascagni, 11, 06132, Italy
Roberto Sorrentino
Affiliation:
Department of Engineering, University of Perugia, Via G. Duranti, 93, 06125, Italy. Phone: +39 0755853666
Flavio Giacomozzi
Affiliation:
Fondazione Bruno Kessler (FBK), Via Via Sommarive 18, 38123, Povo (TN), Italy
Benno Margesin
Affiliation:
Fondazione Bruno Kessler (FBK), Via Via Sommarive 18, 38123, Povo (TN), Italy
*
Corresponding author: A. Cazzorla Email: alessandro.cazzorla@studenti.unipg.it
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Abstract

This paper presents the modeling, manufacturing, and testing of a micro-electromechanical system (MEMS)-based LC tank resonator suitable for low phase-noise voltage-controlled oscillators (VCOs). The device is based on a variable MEMS varactor in series with an inductive coplanar waveguide line. Two additional parallel stubs controlled by two ohmic MEMS switches have been introduced in order to increase the resonator tunability. The device was fabricated using the FBK-irst MEMS process on high resistivity (HR) silicon substrate. Samples were manufactured with and without a 0-level quartz cap. The radio frequency characterization of the devices without 0-level cap has shown a continuous tuning range of 11.7% and a quality factor in the range of 33–38. The repeatability was also tested on four samples and the continuous tuning is 11.7 ± 2%. Experimental results on the device with a 0-level cap, show a frequency downshift of about 200 MHz and a degradation of the quality factor of about 20%. This is, most likely, due to the polymeric sealing ring as well as to a contamination of the ohmic contacts introduced by the capping procedure. A preliminary design of a MEMS-based VCO was performed using Advanced Design System and a hardwired prototype was fabricated on Surface Mount Technology on RO4350 laminate. The prototype was tested resulting in a resonance frequency of 5 GHz with a phase noise of −105 and −126 dBc at 100 KHz and 1 MHz, respectively, and a measured output power of −1 dBm.

Keywords

High-QLow phase-noiseLC tankMEMS varactorVCOClapp
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 9 , Issue 2 , March 2017 , pp. 249 - 258
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

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References

REFERENCES

[1] Leeson, D.B.: A simple model of feedback oscillator noise spectrum, in Proc. of the IEEE, 54 (2) (1966), 329–330.CrossRefGoogle Scholar
[2] Kuhn, W.B.; Ibrahim, N.M.: Analysis of current crowding effects on multiturn spiral inductors. IEEE Trans. Microw. Theory Tech., 49 (2000), 31–38.CrossRefGoogle Scholar
[3] Burghartz, J.N.; Edelstein, D.C.; Soyuer, M.; Ainspan, H.A.; Jenkins, K.A.: RF circuit design aspects of spiral inductors on silicon. IEEE J. Solid-State Circuits, 33 (1998), 2028–2034.CrossRefGoogle Scholar
[4] Yoon, Y.; Choi, J.: Experimental analysis of the effect of metal thickness on the quality factor in integrated spiral inductors for RF IC's. IEEE Electron Device Lett., 25 (2004), 76–79.Google Scholar
[5] Jeong, J.W. et al. : Modeling of T-model equivalent circuit for spiral inductors in 90 nm CMOS technology, in Int. Conf. on Microelectronic Test Structures (ICMTS), Tempe (AZ), 23–26 March 2015.CrossRefGoogle Scholar
[6] Oh, J.; Rieh, J.S.: A comprehensive study of high-Q Island-gate varactors (IGVs) for CMOS millimeter-wave applications. IEEE Trans. Microw. Theory Tech., 59 (6) (2011), 1520–1528.Google Scholar
[7] Quemerais, T.; Gloria, D.; Golanski, D.; Bouvot, S.: High-Q MOS varactors for millimeter-wave applications in CMOS 28-nm FDSOI. IEEE Electron Device Lett., 36 (2) (2015), 87–89.CrossRefGoogle Scholar
[8] Rebeiz, G.M.: RF MEMS: Theory, Design, and Technology, Hoboken, New Jersey (USA), John Wiley & Sons, 2003.CrossRefGoogle Scholar
[9] Giacomozzi, F. et al. : A flexible technology platform for the fabrication of RF-MEMS devices, in Int. Semiconductor Conf., Romania, 2011, pp. 155–158.CrossRefGoogle Scholar
[10] Farinelli, P.; Solazzi, F.; Calaza, C.; Margesin, B.; Sorrentino, R.: A wide tuning range MEMS varactor based on a toggle push-pull mechanism, in IEEE Conf., European Microwave Conf., Amsterdam, 27–31 October 2008.CrossRefGoogle Scholar
[11] Farinelli, P. et al. : A low contact-resistance winged-bridge RF-MEMS series switch for wide-band applications. J. Eur. Microw. Assoc. 3 (2007), 268–278.Google Scholar
[12] Sorrentino, R.; Bianchi, G.: Microwave and RF Engineering, Hoboken, New Jersey (USA), Jonh Wiley & Sons, 2010.CrossRefGoogle Scholar
[13] Mulloni, V.; Giacomozzi, F.; Margesin, B.: Controlling stress and stress gradient during the release process in gold suspended micro-structures. Sens. Actuators. A, 162 (1) (2010), 93–99.CrossRefGoogle Scholar
[14] Giacomozzi, F. et al. : Assessment of ORDYL SY 355 dry film for RF MEMS 0-level packaging, in Proc. of MEMSWAVE 2014, La Rochelle, France, 30 June–2 July 2014.Google Scholar
[15] Bhattacharya, A.; Mandal, D.; Bhattacharyya, T.K.: A 1.3–2.4-GHz 3.1-mW VCO using electro-thermo- mechanically tunable self-assembled MEMS inductor on HR substrate. IEEE Trans. Microw. Theory Tech., 62 (2) (2015), 459–469.CrossRefGoogle Scholar
[16] Tseng, S.H.; Hung, Y.; Juang, Y.Z.; Lu, M.: A 5.8-GHz VCO with CMOS-compatible MEMS inductors. Sens. Actuators A, 139 (1–2) (2007), 187–193.CrossRefGoogle Scholar
[17] Guo, C.; Hu, J.; Zhu, S.; Sun, H.; Lv, H.: A 5-GHz low-phase-noise CMOS LC-VCO for China ETC applications, in IEEE Int. Conf. on Microwave Technology & Computational Electromagnetics, Beijing, 22–25 May 2011.CrossRefGoogle Scholar
[18] Aqeeli, M.; Hu, H.: Design of a high performance 5.0 GHz low phase noise 0.35 μm CMOS voltage controlled oscillator. Int. J. Inf. Electron. Eng., 3 (4) (2013).Google Scholar
[19] Heves, E.; Tekin, I.; Gurbuz, Y.: A MEM-varactor tuned, 7.8 GHz differential LC voltage-controlled oscillator. Sens. Actuators A, 144 (2) (2008), 296–303.CrossRefGoogle Scholar