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Organic resistive nonvolatile memory materials

  • Resistive switching phenomena in thin films: Materials, devices, and applications
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Abstract

Resistive memory devices based on organic materials that can be configured to two or more stable resistance states have been extensively explored as information storage media due to their advantages, which include simple device structures, low fabrication costs, and flexibility. Various organic-based materials such as small molecules, polymers, and composite materials have been observed to show bistability. This review provides a general summary about the materials, structures, characteristics, and mechanisms of organic resistive memory devices. Several critical strategies for device fabrication, performance enhancement, and integrated circuit architectures are also discussed.

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Acknowledgments

The authors thank T.L.’s group members, including Byungjin Cho, Sunghoon Song, and Yongsung Ji, who are working on this topic. T.L. also acknowledges partial support from the Korean National Research Laboratory program and National Core Research Center grant from the Korean Ministry of Education, Science, and Technology. Y.C. acknowledges the support of the Defense Advanced Research Projects Agency (DARPA) under the program “Physical Intelligence,” and by the Air Force Office of Scientific Research (AFOSR) under the program “Bio-inspired intelligent sensing materials for Fly-by-Feel autonomous vehicle.”

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  1. Department of Physics and Astronomy, Seoul National University, Korea

    Takhee Lee

  2. University of California, Los Angeles, USA

    Yong Chen

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  1. Takhee Lee
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Correspondence to Takhee Lee.

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Lee, T., Chen, Y. Organic resistive nonvolatile memory materials. MRS Bulletin 37, 144–149 (2012). https://doi.org/10.1557/mrs.2012.4

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