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Understanding the relationship between Cu2ZnSn(S,Se)4 material properties and device performance

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Abstract

Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaics (PV) have long been considered promising candidates for large-scale PV deployment due to the availability of constituent elements and steady improvements in device efficiency over time. The key limitation to high efficiency in this technology remains a deficit in the open-circuit voltage with respect to the band gap. The past decade has seen significant progress toward understanding how the various material properties such as bulk and surface composition, point defects (intrinsic and extrinsic), and grain boundaries all impact the optoelectronic properties of CZTSSe materials, and consequently device performance. This paper aims to summarize what is known about the CZTSSe bulk and surfaces, and how these material properties may be related to the Voc deficit.

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Acknowledgments

The information, data, or work presented herein was funded in part by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE EE0006334. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.

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  1. IBM TJ Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York, 10598, USA

    Talia Gershon, Tayfun Gokmen, Oki Gunawan, Richard Haight & Supratik Guha

  2. KAIST Department of Materials Science, Munji-ro 14, Yuseong-gu, Daejeon, Korea

    Byungha Shin

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  1. Talia Gershon
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Correspondence to Talia Gershon.

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Gershon, T., Gokmen, T., Gunawan, O. et al. Understanding the relationship between Cu2ZnSn(S,Se)4 material properties and device performance. MRS Communications 4, 159–170 (2014). https://doi.org/10.1557/mrc.2014.34

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