Abstract
We have successfully achieved a transconductance of 0.76 S/m for organic thin-film transistors with 4 V operation, which is the largest value reported for organic transistors fabricated using printing methods. Using a subfemtoliter inkjet, silver electrodes with a line width of 1 urn and a channel length of 1 urn were printed directly onto an air-stable, high-mobility organic semiconductor that was deposited on a single-molecule self-assembled monolayer-based gate dielectric. On reducing the droplet volume (0.5 fl) ejected from the inkjet nozzle, which reduces sintering temperatures down to 90°C, the inkjet printing of silver electrodes was accomplished without damage to the organic semiconductor.
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Acknowledgments
The authors would like to thank Y. Noguchi, K. Fukuda, and T. Nakagawa for fruitful discussions and technical support. This work was partially supported by JST/CREST, Special Coordination Funds for Promoting, and NEDO. One of the authors (T.Y.) is grateful to the research fellowships for young scientists of JSPS.
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Yokota, T., Sekitani, T., Kato, Y. et al. Low-voltage organic transistor with subfemtoliter inkjet source-drain contacts. MRS Communications 1, 3–6 (2011). https://doi.org/10.1557/mrc.2011.4
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DOI: https://doi.org/10.1557/mrc.2011.4