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Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

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Abstract

Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe2 by MBE, MoSe2 on Bi2Se3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi2Te3 and a triple atomic layer of MoTe2. Reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.

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ACKNOWLEDGMENTS

L.B. acknowledges the financial support of the National Secretariat of Higher Education, Science, Technology and Innovation of Ecuador (SENESCYT). Microscopy conducted at ORNL’s Center for Nanophase Materials Sciences (CNMS), which is a U.S. Department of Energy, Office of Science User Facility (JCI).

This work was supported in part by the NSF/AFOSR EFRI-2DARE program (1433490), NSF Grant DMR1400432 and Center for Low Energy Systems Technology (LEAST), one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA.

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Authors and Affiliations

  1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, 14853, USA

    Suresh Vishwanath, Debdeep Jena & Huili Grace Xing

  2. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, 46556, USA

    Suresh Vishwanath, Sergei Rouvimov, Debdeep Jena & Huili Grace Xing

  3. Department of Physics, University of Notre Dame, Notre Dame, Indiana, 46556, USA

    Xinyu Liu, Katrina Magno & Jacek K. Furdyna

  4. Departamento de Física, Escuela Politécnica Nacional, Quito, 170525, Ecuador

    Leonardo Basile

  5. Oak Ridge National Laboratory, Center of Nanophase Materials Sciences, Oak Ridge, Tennessee, 37831, USA

    Leonardo Basile

  6. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas, 75083, USA

    Ning Lu, Angelica Azcatl, Robert M. Wallace & Moon Kim

  7. Center of Nanophase Materials Sciences, Oak Ridge, Tennessee, 37831, USA

    Juan-Carlos Idrobo

  8. Department of Materials Science and Engineering, Cornell University, Ithaca, New York, 14853, USA

    Debdeep Jena & Huili Grace Xing

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  1. Suresh Vishwanath
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Correspondence to Suresh Vishwanath or Huili Grace Xing.

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Vishwanath, S., Liu, X., Rouvimov, S. et al. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy. Journal of Materials Research 31, 900–910 (2016). https://doi.org/10.1557/jmr.2015.374

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