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Vertical graphene by plasma-enhanced chemical vapor deposition: Correlation of plasma conditions and growth characteristics

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Abstract

Vertically aligned graphene was grown by plasma-enhanced chemical vapor deposition using methane feedstock. Optical emission spectroscopy (OES) was used to monitor the plasma species, and Raman spectroscopy was used for characterizing the properties of as-grown vertically aligned graphene. OES-derived information on plasma species, such as C, C2, CH, and H, are correlated with the properties of the vertically aligned graphene. Graphene grown at 250 W and 15 sccm exhibited the lowest amount of defects. Although OES peak intensities occurred at the highest power and lowest flow conditions, the OES peak ratios of plasma species had a greater dependence on flow rate and exhibited a saddle point in the atomic C/H ratio corresponding to optimal growth involving the lowest amount of overall defects. Plasma diagnostics provides a valuable approach to optimize growth characteristics and material properties.

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ACKNOWLEDGMENTS

The authors acknowledge technical assistance and insightful discussions with Brett Cruden. Work by E.S.-R. was made possible through a Jenkins/NASA Fellowship. A NASA grant NNX09AQ44A to the University of California Santa Cruz is acknowledged for instruments in the UCSC MACS Facility within the UCSC/NASA-ARC ASL. W.P., D.O., J.P., D.M., B.W., S.T., and T-T.N-D. are student interns. M.W. now with University of Kentucky. T-T.N-D., J.G., and M.O. are employed by ELORET Corporation at NASA Ames.

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Authors and Affiliations

  1. Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California, 94035, USA

    Emil Sandoz-Rosado, William Page, David O’Brien, Joshua Przepioski, Dennis Mo, Benjamin Wang, Tam-Triet Ngo-Duc, Jovi Gacusan, Michael W. Winter & M. Meyyappan

  2. Foothill College and UCSC/NASA-ARC Advanced Studies Laboratories, NASA Ames Research Center, Moffett Field, California, 94035, USA

    Robert D. Cormia

  3. Center for Nanotechnology and UCSC/NASA-ARC Advanced Studies Laboratories, NASA Ames Research Center, Moffett Field, California, 94035, USA

    Shuhei Takahashi & Michael M. Oye

  4. Department of Electrical Engineering, University of California Santa Cruz, Santa Cruz, California, 95064, USA

    Michael M. Oye

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  1. Emil Sandoz-Rosado
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Correspondence to Michael M. Oye.

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Sandoz-Rosado, E., Page, W., O’Brien, D. et al. Vertical graphene by plasma-enhanced chemical vapor deposition: Correlation of plasma conditions and growth characteristics. Journal of Materials Research 29, 417–425 (2014). https://doi.org/10.1557/jmr.2013.293

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  • DOI: https://doi.org/10.1557/jmr.2013.293

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