Abstract
The local structures about Cu, In, and Se atoms in a series of Cu2Se–In2Se3 pseudobinary compounds have been investigated by x-ray absorption fine structure (XAFS). In K-edge XAFS and L3-edge x-ray absorption near-edge structure (XANES) suggest that CuInSe2, Cu0.9InSe1.95, Cu0.82InSe1.91, and Cu2In3Se5.5 have a nominally four-coordinated InSe4 structure, whereas CuIn3Se5 and CuIn5Se8 possess two different InSe4 structures. Cu K-edge XAFS also showed that CuIn3Se5 and CuIn5Se8 possess two different CuSe4 structures, whereas others have a CuSe4 structure. Se K-edge XANES and curve fitting analysis reveal that the Cu vacancy (VCu) gradually forms with decreasing Cu/In ratio. Moreover, the substitution of In for VCu (InCu) is observed in CuIn3Se5 and CuIn5Se8. These results were compared to the previously proposed Cu–In–Se models. We conclude that Cu0.9InSe1.95 and Cu0.82InSe1.91 have a chalcopyrite structure with VCu and that the structure of CuIn3Se5 and CuIn5Se8 is a stannite-like structure with VCu and InCu defects.
Similar content being viewed by others
References
J.L. Shay, B. Tell, H.M. Kasper, and L.M. Schiavone: Electronic structure of AgInSe2 and CuInSe2. Phys. Rev. B 7, 4485 (1973).
R. Herberholz, V. Nadenau, U. Rühle, C. Köble, H.W. Schock, and B. Dimmler: Prospects of wide-gap chalcopyrites for thin film photovoltaic modules. Sol. Energy Mater. Sol. Cells 49, 227 (1997).
W. Höring, H. Neumann, H. Sobotta, B. Schumann, and G. Kühn: The optical properties of CuInSe2 thin films. Thin Solid Films 48, 67 (1978).
H.A. Weakleim and D. Redfield: Temperature dependence of the optical properties of silicon. J. Appl. Phys. 50, 1491 (1979).
J.E. Jaffe and A. Zunger: Theory of the band-gap anomaly in ABC2 chalcopyrite semiconductors. Phys. Rev. B 29, 1882 (1984).
I. Repins, M.A. Contreras, B. Egaas, C. DeHart, J. Scharf, C.L. Perkins, B. To, and R. Noufi: 19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor. Prog. Photovolt. Res. Appl. 16, 235 (2008).
M.A. Green, K. Emery, Y. Hshikawa, and W. Warta: Solar cell efficiency tables (version 53). Prog. Photovoltaics Res. Appl. 18, 144 (2010).
D. Schmid, M. Ruckh, F. Grunwald, and H.W. Schock: Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2. J. Appl. Phys. 73, 2902 (1993).
L.S. Palatnik and E.J. Rogacheva: Phase diagrams and structure of some semiconductor A2ICVI-B2IIICVI alloys. Sov. Phys. Dokl. 12, 503 (1967).
W. Hönle, G. Kühn, and U.C. Boehnke: Crystal structures of two quenched Cu-In-Se phases. Cryst. Res. Technol. 23, 1347 (1988).
B.H. Tseng and C.A. Wert: Defect-ordered phases in a multiphase Cu-In-Se material. J. Appl. Phys. 65, 2254 (1989).
K.S. Knight: The crystal structures of CuInSe2 and CuInTe2. Mater. Res. Bull. 27, 161 (1992).
H.Z. Xiao, L.C. Yang, and A. Rockett: Structural, optical, and electrical properties of epitaxial chalcopyrite CuIn3Se5 films. J. Appl. Phys. 76, 1503 (1994).
S. Nomura and S. Endo: Preparation and structural analysis of ordered vacancy compounds in the Cu-In-Se system. MRS Jpn. 20, 755 (1996).
T. Hanada, A. Yamana, Y. Nakamura, O. Nittono, and T. Wada: Crystal structure of CuIn3Se5 semiconductor studied using electron and X-ray diffractions. Jpn. J. Appl. Phys. 36, L1494 (1997).
J.M. Merino, S. Mahanty, M. Leon, R. Diaz, F. Rueda, and J.L.M.d. Vidales: Structural characterization of CuIn2Se3.5, CuIn3Se5 and CuIn5Se8. Thin Solid Films 361/362, 70 (2000).
C.H. Chang, S.H. Wei, J.W. Johnson, S.B. Zhang, N. Leyarovska, G. Bunker, and T.J. Anderson: Local structure of CuIn3Se5: X-ray absorption fine structure study and first-principles calculations. Phys. Rev. B 68, 054108 (2003).
W. Paszkowicz, R. Lewandowska, and R. Bacewicz: Rietveld refinement for CuInSe2 and CuIn3Se5. J. Alloy. Comp. 362, 241 (2004).
U.C. Boehnke and G. Kühn: Phase relations in the ternary system Cu-In-Se. J. Mater. Sci. 22, 1635 (1987).
B. Tell, J.L. Shay, and H.M. Kasper: Room-temperature electrical properties of Te I-III-VI2 semiconductors. J. Appl. Phys. 43, 2469 (1972).
J. Parkes, R.D. Thomlinson, and M.J. Hampshiere: Electrical properties of CuInSe2 single crystals. Solid State Electron. 16, 773 (1973).
P. Migliorato, J.L. Shay, H.M. Kasper, and S. Wagner: Analysis of the electrical and luminescent properties of CuInSe2. J. Appl. Phys. 46, 1777 (1975).
R. Noufi, R. Axton, C. Herrington, and S.K. Deb: Electronic properties versus composition of thin films of CuInSe2. Appl. Phys. Lett. 45, 668 (1984).
S.B. Zhang, S.H. Wei, and A. Zunger: Stabilization of ternary compounds via ordered arrays of defect pairs. Phys. Rev. Lett. 78, 4059 (1997).
S.B. Zhang, S.H. Wei, and A. Zunger: Defect physics of the CuInSe2 chalcopyrite semiconductor. Phys. Rev. B 57, 9642 (1998).
T. Maeda and T. Wada: Characteristics of chemical bond and vacancy formation in chalcopyrite-type CuInSe2 and related compounds. Phys. Status Solidi C 6, 1312 (2009).
N. Kohara, S. Nishiawaki, T. Negami, and T. Wada: Physical vapor deposition of hexagonal and tetragonal CuIn5Se8 thin films. Jpn. J. Appl. Phys. 39, 6316 (2000).
R. Bacewicz, A. Wolska, K. Lawniczak-Jablonska, and P. Sainctavit: X-ray absorption near-edge structure of CuInSe2 crystals. J. Phys. Condens. Matter 12, 7371 (2000).
A. Wolska, R. Bacewicz, J. Fillipowicz, and K. Attenkofer: X-ray absorption near-edge structure of selenium in the Cu-In-Se system. J. Phys. Condens. Matter 13, 4457 (2001).
J.M. Merino, S. Díaz-Moreno, G. Subías, and M. Leön: A comparative study of Cu-Se and In-Se bond length distributions in CuInSe2 with related In-rich compounds. Thin Solid Films 480/481, 295 (2005).
R. Lewandowska, R. Bacewicz, and J. Fillipowicz: EXAFS study of In-rich phases in Cu-In-Se system. Cryst. Res. Technol. 37, 235 (2002).
T. Wada, H. Kinoshita, and S. Kawata: Preparation of chalcopyrite-type CuInSe2 by non-heating process. Thin Solid Films 431/432, 11 (2003).
A.L. Ankudinov, B. Ravel, J.J. Rehr, and S.D. Conradson: Real-space multiple-scattering calculation and interpretation of x-ray-absorption near-edge structure. Phys. Rev. B 58, 7565 (1998).
N. Kosugi, Y. Tokura, H. Takagi, and S. Uchida: Cu K-edge x-ray absorption near-edge structure and electronic structure of Nd2-xCe xCuO4-y and La2-xSr xCuO4. Phys. Rev. B 41, 131 (1990).
T. Yamamoto, T. Tanaka, S. Suzuki, R. Kuma, K. Teramura, Y. Kou, T. Funabiki, and S. Yoshida: NO reduction with CO in the presence of O2 over Cu/Al2O3 (3)—Structural analysis of active species by means of XAFS and UV/VIS/NIR spectroscopy. Top. Catal. 18, 113 (2002).
M. Sano, S. Komorita, and H. Yamatera: XANES spectra of copper(II) complexes: Correlation of the intensity of the 1s→3d transition and the shape of the complexes. Inorg. Chem. 31, 459 (1992).
H.W. Spiess, U. Haeberln, G. Brandt, A. Räuber, and J. Schneider: Nuclear magnetic resonance in IB-III-VI2 semiconductors. Phys. Status Solidi B 62, 183 (1974).
G. Zahn and P. Paufler: Identification of predominant point defects in nonstoichiometric CuInSe2 by x-ray powder diffraction. Cryst. Res. Technol. 23, 499 (1988).
J.M. Merino, J.L. Martin de Vidales, S. Mahanty, R. Diaz, F. Rueda, and M. León: Composition effects on the crystal structure of CuInSe2. J. Appl. Phys. 80, 5610 (1996).
F. Frolow, L. Chernyak, D. Cahen, H. Hallak, J. Gabboun, A. Kvick, and H. Graafama: Ternary and multinary compounds. Inst. Phys. Conf. Ser. 152, 67 (1998).
J. T-Thienprasert, J. Nukeaw, A. Sungthong, S. Porntheeraphat, S. Singkarat, D. Onkaw, S. Rujirawat, and S. Limpijumnong: Local structure of indium oxynitride from x-ray absorption spectroscopy. Appl. Phys. Lett. 93, 051903 (2008).
L. Gastaldi, M.G. Simeone, and S. Viticoli: Structure refinement of ZnIn2Se4. J. Solid State Chem. 66, 251 (1987).
R.E. March and W.R. Robinson: On the structure of ZnIn2Se4. J. Solid State Chem. 73, 591 (1988).
Acknowledgments
We thank Mr. Junya Kubo, Masaki Fukada, and Ms. Erika Tokumoto for their help in the XAFS measurement. We also thank Dr. Paul Fons of National Institute for Advanced Industrial Science & Technology for his critical reading of the manuscript. This work was in part supported by the Incorporated Administrative Agency New Energy and Industrial Technology Development Organization under the Ministry of Economy, Trade and Industry. This work was also supported in part by a grant from the HighTech Research Center Program for private universities from the Japan Ministry of Education, Culture, Sports, Science and Technology.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Yamazoe, S., Kou, H. & Wada, T. A structural study of Cu–In–Se compounds by x-ray absorption fine structure. Journal of Materials Research 26, 1504–1516 (2011). https://doi.org/10.1557/jmr.2011.63
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/jmr.2011.63