Abstract
We report on the effect of sample non-uniformity on the results of Hall-effect measurements. False positive Hall coefficients were obtained from an evidently n-type ZnO single crystal, although four electrodes with low contact resistance were made and the Van der Pauw parameter for this electrode configuration was close to 1.00. Further position-sensitive characterization revealed that the false positive Hall coefficient was due to non-uniform electrical properties of the sample. To demonstrate a false positive sign of the Hall coefficient due to sample non-uniformity, we devised a model structure made from evident n-type ZnO thin film and successfully reproduced a false positive Hall coefficient from n-type ZnO.
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Acknowledgment
The authors thank Prof. Takafumi Yao of Tohoku University, Sendai, Japan, for his encouragement and suggestions. This study was partly supported by the Fund for Creation of University-Derived Venture Companies from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Part of this study was carried out at the International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), funded by the World Premier International Research Center (WPI) Initiative of MEXT, Japan.
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Ohgaki, T., Ohashi, N., Sugimura, S. et al. Positive Hall coefficients obtained from contact misplacement on evident n-type ZnO films and crystals. Journal of Materials Research 23, 2293–2295 (2008). https://doi.org/10.1557/jmr.2008.0300
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DOI: https://doi.org/10.1557/jmr.2008.0300