Abstract
Neutron powder diffraction methods with Rietveld analysis are utilized to determine GaN lattice parameters from 15 to 298.1 K. Using these measurements and literature data, we calculated the thermal expansion of gallium nitride (GaN) and predicted its higher temperature thermal expansion. The results are compared with available experimental data and earlier work.
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References
I. Akasaki and H. Amano, in Properties of Group III Nitrides, Emis Data Review Series No. 11, edited by J.H. Edgar (INSPEC, London, 1994), p. 30.
K. Wang and R.R. Reeber, J. Phys. Chem. Solids 56, 895 (1995).
R.R. Reeber and K. Wang, Eur. J. Mineral. 7, 1039 (1995).
K. Wang and R.R. Reeber, Geophys. Res. Lett. 22, 1297 (1995).
R.R. Reeber and K. Wang, J. Electr. Mat. 25, 63 (1996).
K. Wang and R.R. Reeber, J. Mater. Res. 11, 1800 (1996).
R.R. Reeber and K. Wang, in Covalent Ceramics III—Science and Technology of Non-Oxides, edited by A.F. Hepp, P.N. Kumta, J.J. Sullivan, G.S. Fischman, and A. E. Kaloyeros (Mat. Res. Soc. Symp. Proc. 410, Pittsburgh, PA, 1996), p. 211.
K. Wang and R.R. Reeber, in Nitride Semiconductors, edited by F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, and S. Strite, (Mat. Res. Soc. Symp. Proc. 482, Warrensdale, PA, 1998), p. 863.
R.R. Reeber, Phys. Status Solidi. A 32, 321 (1975).
E. Grüneisen, Handbuch der Physik 10, 1 (1926).
I. Suzuki, S. Okajima, and K. Seya, J. Phys. Earth 27, 63 (1979).
E. Ejder, Phys. Status Solidi. A 23, K87 (1974).
C.M. Balkas and R.F. Davis, J. Am. Ceram. Soc. 79, 2309 (1996).
A.C. Larson and R.B. Von Dreele, General Structure Analysis System (GSAS), Los Alamos National Laboratory, Los Alamos, NM, LAUR 86–748 (1994), 179 pp.
L.W. Finger, D.E. Cox, and A.P. Jephcoat, J. Appl. Cryst. 27, 892 (1994).
T. Detchprohm, K. Hiramatsu, K. Itoh, and I. Akasaki, Jpn. J. Appl. Phys. 31, L1454 (1992).
M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, K. Pakula, J.M. Baranowski, C.T. Foxon, and T.S. Cheng, J. Appl. Phys. 69, 73 (1996).
H.P. Maruska and J.J. Tietjen, Appl. Phys. Lett. 15, 327 (1969).
A.U. Sheleg and W.A. Savastenko, Izv. Akad. Nauk BSSR, Ser. Fiz. Mat. Nauk, 3, 126 (1976).
M. Leszczynski, T. Suski, H. Teisseyre, P. Perlin, I. Grzegory, J. Jun, S. Porowski, and T.D. Moustakas, J. Appl. Phys. 76, 4909 (1994)
M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, B. Palosz, and S. Porowski, Acta. Phys. Pol. 90, 887 (1996).
S.I. Novikova, in Physics of III–V Compounds, Semiconductors and Semimetals Vol. 2, edited by R.K. Willardson and A.C. Beer (Academic Press, New York, 1966), p. 33.
C.J. Rawn and J. Chaudhuri, (unpublished).
P. Perlin, C. Jauberthie-Carillon, J.P. Itie, A. San Miguel, I. Grzegory, and A. Polian, Phys. Rev. B 45, 83 (1992).
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Reeber, R.R., Wang, K. Lattice parameters and thermal expansion of GaN. Journal of Materials Research 15, 40–44 (2000). https://doi.org/10.1557/JMR.2000.0011
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DOI: https://doi.org/10.1557/JMR.2000.0011