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Segregation of Vanadium at the WC/Co Interface in VC-doped WC-Co

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Abstract

Morphology of carbide grain in WC–12 wt.% Co–0.5 wt.% VC was examined by HREM and EDS with a special interest in the segregation of V at the WC/Co interfaces. A small addition of VC in WC-Co is effective to suppress the grain growth of carbide grains. HREM observation revealed that the WC/Co interfaces are faceted and consist of mainly two kinds of habit planes, (1010) and (0001), respectively. EDS analyses clearly showed the segregation of doped V along the interfaces. In addition, the concentration of segregated V is higher at the (0001) type habit plane than (1010) one. The retardation of the grain growth of carbide grains in the VC-doped WC-Co is closely related to the formation of the faceted WC/Co interface.

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References

  1. H. E. Exner, Int. Metals Rev. 4, 149 (1979).

    Google Scholar 

  2. A. Egami, M. Ehira, M. Machida, Proceedings of 13th Int. Plansee Seminar, edited by H. Bildstein, and R. Eck, Metallwerk Plansee, Reutte (1993), Vol. 3, p. 693.

  3. T. Taniuchi, K. Okada, and T. Tanase, Proceedings of 14th Int. Plansee Seminar (1997).

  4. K. Mohan and P.R. Strutt, NanoStructured Mater. 7 (5), 547 (1996).

    Article  CAS  Google Scholar 

  5. K. Mohan and P. R. Strutt, Mater. Sci. Eng. A209 (1–2), 237 (1996).

    Article  CAS  Google Scholar 

  6. H. Suzuki, Y. Fuke, and K. Hayashi, J. Jpn. Osc. Powder & Powder Metall. 19 (3), 106 (1972).

    Article  Google Scholar 

  7. O. Terade and H. Suzuki, Funtai-Oyabi-Fummatsu-Yakin-Journal of the Japan Society of Powder and Powder Metallurgy, 44 (1), 102 (1997).

    Article  Google Scholar 

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Authors and Affiliations

  1. Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7-3-1 Bunkyo-ku, 113–8656, Tokyo, Japan

    A. Jaroenworaluck, T. Yamamoto, Y. Ikuhara & T. Sakuma

  2. Tsukuba Plant, Mitsubishi Materials Corp., 1511 Furumagi, Ishige-machi, Yuuki-gun, 300–2795, Ibaraki, Japan

    T. Taniuchi, K. Okada & T. Tanase

Authors
  1. A. Jaroenworaluck
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  2. T. Yamamoto
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  3. Y. Ikuhara
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  4. T. Sakuma
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  5. T. Taniuchi
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  6. K. Okada
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  7. T. Tanase
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Jaroenworaluck, A., Yamamoto, T., Ikuhara, Y. et al. Segregation of Vanadium at the WC/Co Interface in VC-doped WC-Co. Journal of Materials Research 13, 2450–2452 (1998). https://doi.org/10.1557/JMR.1998.0341

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  • DOI: https://doi.org/10.1557/JMR.1998.0341

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