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Micromechanical and tribological characterization of doped single-crystal silicon and polysilicon films for microelectromechanical systems devices

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Abstract

Microelectromechanical systems (MEMS) devices are made of doped single-crystal silicon, LPCVD polysilicon films, and other ceramic films. Very little is understood about tribology and mechanical characterization of these materials on micro- to nanoscales. Micromechanical and tribological characterization of p-type (lightly boron-doped) single-crystal silicon (referred to as “undoped”), p +-type (boron doped) single-crystal silicon, polysilicon bulk, and n +-type (phosphorous doped) LPCVD polysilicon films have been carried out. Hardness, elastic modulus, and scratch resistance of these materials were measured by nanoindentation and microscratching using a nanoindenter. Friction and wear properties were measured using an accelerated ball-on-flat tribometer. It is found that the undoped silicon and polysilicon bulk as well as n +-type polysilicon film exhibit higher hardness and elastic modulus than the p +-type silicon. The polysilicon bulk and n +-type polysilicon film exhibit the lowest friction and highest resistance to scratch and wear followed by the undoped silicon and with the poorest behavior of the p +-type silicon. During scratching, the p +-type silicon deforms like a ductile metal.

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Authors and Affiliations

  1. Computer Microtribology and Contamination Laboratory, Department of Mechanical Engineering, The Ohio State University, 43210, Columbus, Ohio, USA

    Bharat Bhushan & Xiaodong Li

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  1. Bharat Bhushan
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  2. Xiaodong Li
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Bhushan, B., Li, X. Micromechanical and tribological characterization of doped single-crystal silicon and polysilicon films for microelectromechanical systems devices. Journal of Materials Research 12, 54–63 (1997). https://doi.org/10.1557/JMR.1997.0010

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