Abstract
We analyze the formation of VSi2 at the amorphous-vanadium-silicide/amorphous-Si interface by linear-heating and isothermal calorimetry, and cross-sectional transmission electron microscopy. We show evidence that indicates sporadic VSi2 nucleation with a steady-state nucleation rate after a transient period. The results are contrasted with those obtained for Al2Ni nucleating at the polycrystalline-Al/polycrystalline-Ni interface, where the kinetics appears to be controlled by growth of a fixed number of nuclei at quickly consumed preferred nucleation sites.
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Ma, E., Clevenger, L.A. & Thompson, C.V. Nucleation of an intermetallic at thin-film interfaces: VSi2 contrasted with Al3Ni. Journal of Materials Research 7, 1350–1355 (1992). https://doi.org/10.1557/JMR.1992.1350
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DOI: https://doi.org/10.1557/JMR.1992.1350