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Metal-insulator transition in highly disordered carbon fibers

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Abstract

The electronic transition from localized to delocalized states of carriers in a disordered carbon material is investigated by photoconductivity measurements. Phenol-derived activated carbon fibers, where the carriers are strongly localized due to disorder, are heat treated in the range 300–2500 °C to give rise to the insulator-metal transition. Dark conductivity, Raman spectra, and x-ray diffraction patterns are also measured to characterize their structural changes. As a result, the transition temperature was determined to be rather low, around 1000 °C, considering the rapid decrease in the photoconductivity above this temperature. This decrease was ascribed to a fast recombination between the photoexcited carriers and the delocalized carriers generated by heat treatment.

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Author notes

  1. K. Kuriyama

    Present address: Permanent address: R & D Division, Sumitomo Metal Industries Ltd., Fuso 1-8, Amagasaki, Hyogo, 660, Japan

Authors and Affiliations

  1. Center for Materials Science and Engineering, Departments of Electrical Engineering and Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA

    K. Kuriyama & M. S. Dresselhaus

Authors
  1. K. Kuriyama
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  2. M. S. Dresselhaus
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Kuriyama, K., Dresselhaus, M.S. Metal-insulator transition in highly disordered carbon fibers. Journal of Materials Research 7, 940–945 (1992). https://doi.org/10.1557/JMR.1992.0940

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  • DOI: https://doi.org/10.1557/JMR.1992.0940

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