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Novel Diffusion Barrier with Ultra-Thin Silicon Nitride Cap Layer

Published online by Cambridge University Press:  10 February 2011

J. P. Lu ,
W. Y. Hsu ,
Q. Z. Hong ,
G. A. Dixit ,
V. T. Cordasco ,
E. M. Zielinski ,
J. D. Luttmer ,
R. H. Havemann ,
L. K. Magel  and
H. L. Tsai
J. P. Lu
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
W. Y. Hsu
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
Q. Z. Hong
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
G. A. Dixit
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
V. T. Cordasco
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
E. M. Zielinski
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
J. D. Luttmer
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
R. H. Havemann
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
L. K. Magel
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
H. L. Tsai
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243
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Abstract

A novel type of diffusion barrier, consisting of a conducting layer whose surface is enriched with silicon nitride, was developed. The new barrier was prepared by thermal decomposition of a metal-organic precursor, tetrakis(dimethylamino) titanium (TDMAT), followed by in-situ silane anneal and subsequent surface nitridation. It combines the conformality and conductivity advantages of the underlying diffusion barrier with the good barrier properties of silicon nitride. The new barrier films were characterized by sheet resistance measurement, secondary electron micrographs (SEM) and x-ray photoelectron spectroscopy (XPS). The thermal stability of Cu/capped barrier/Si multilayer structures was demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 507
Copyright
Copyright © Materials Research Society 1998

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References

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