A single wafer gate cluster tool has been evaluated in an effort to quantify the effects of gate clustering on defect density, process capability and device performance. The single wafer gate cluster tool consists of a hydrofluoric vapor (HF-vapor) pre-gate cleanup module, a rapid thermal oxidation (RTO) module and a polysilicon rapid thermal chemical vapor deposition (RTCVD) module. The gate dielectric charge to breakdown (Qbd) of capacitor structures formed using the integrated single wafer gate cluster tool process sequence typically averaged 9.1 to 12.3 coulombs per square centimeter (C/cm2). Excellent gate oxide integrity yield values in the range of 99.8% to 100% were also routinely obtained. The films were free of low field and mid field gate dielectric breakdown events and the devices exhibited dielectric breakdown field strength in excess of fourteen megavolts per centimeter (MV/cm). The cluster tool process was successfully integrated into a transistor device flow. The characteristics of devices formed using the cluster tool process were equivalent to those of devices formed using conventional batch processing at the gate level.