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Characterization of Nanocones Grown During DC Magnetron Sputtering of an ITO Target

Published online by Cambridge University Press:  15 February 2011

J.F. Conley Jr ,
D. McClain ,
J. Jiao ,
W. Gao ,
D. Evans  and
Y. Ono
J.F. Conley Jr
Affiliation:
IC Process Technology Laboratory, Sharp Labs of America, 5700 NW Pacific Rim Blvd., Camas, WA, 98607
D. McClain
Affiliation:
Portland State University, P.O. Box 751, Portland, OR, 97207
J. Jiao
Affiliation:
Portland State University, P.O. Box 751, Portland, OR, 97207
W. Gao
Affiliation:
IC Process Technology Laboratory, Sharp Labs of America, 5700 NW Pacific Rim Blvd., Camas, WA, 98607
D. Evans
Affiliation:
IC Process Technology Laboratory, Sharp Labs of America, 5700 NW Pacific Rim Blvd., Camas, WA, 98607
Y. Ono
Affiliation:
IC Process Technology Laboratory, Sharp Labs of America, 5700 NW Pacific Rim Blvd., Camas, WA, 98607
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Abstract

A low temperature method for uniform growth of In2O3 nanostructures on Si wafers that does not require separate catalyst materials or template-assistance is investigated. Nanostructures are uniformly deposited on either bare or SiO2 thin film coated Si substrates via DC magnetron sputtering at 200-400°C using a 90% In2O3 / 10% SnO2 (ITO) target. The nanostructures are approximately 500 nm long, sit atop an accompanying underlying 100 nm conductive film, and are conically shaped, with a diameter of about 80 nm at the base, tapering to a point that is capped with a spherical “ball”. X-ray diffraction (XRD) indicates a cubic In2O3 phase. Field emission from the tips is observed at a base pressure of 10-8 Torr with turn-on fields in a range between 45-75 V/cm and threshold fields from 64-105 V/cm. Nanocone growth is investigated with respect to O2 and Ar flow rates, temperature, power, pressure, wafer rotation, and time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 879: Symposium Z – Chemistry of Nanomaterial Synthesis and Processing , 2005 , Z3.37
Copyright
Copyright © Materials Research Society 2005

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