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Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide

Published online by Cambridge University Press:  09 December 2014

Laura Jamison
Affiliation:
Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Kumar Sridharan
Affiliation:
Engineering Physics Department, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA; and Materials Science and Engineering Department, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Steve Shannon
Affiliation:
Nuclear Engineering Department, North Carolina State University, Raleigh, North Carolina 27695, USA
Izabela Szlufarska*
Affiliation:
Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA; Materials Science and Engineering Department, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA; and Engineering Physics Department, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
*
a)Address all correspondence to this author. e-mail: szlufarska@wisc.edu
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Abstract

The grain size dependence of the radiation response of silicon carbide (SiC) has been studied under 1.0 MeV Kr2+ ion irradiation. It was found that radiation resistance decreased with grain refinement, in contrast to previous studies on the same nanocrystalline (nc) SiC material using Si ion and high voltage electron irradiation. The effect of grain size on radiation response may depend upon the ion species used due to a potential change in amorphization mechanism. It was also determined that temperature had a strong effect on the grain size dependence of the radiation response in SiC due to the activation temperatures of critical recombination and migration reactions. This work explores the possible impacts of irradiation species, temperature, and experimental design on the radiation response of SiC.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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