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Very low field electron emission from Hot Filament CVD grown microcrystalline diamond

Published online by Cambridge University Press:  14 March 2011

B.S. Satyanarayana ,
X.L. Peng ,
G. Adamopoulos ,
J. Robertson ,
W.I. Milne  and
T.W. Clyne
B.S. Satyanarayana
Affiliation:
Electronic Materials & Devices, Dept of Engineering, Cambridge University, Cambridge. CB2 1PZ., U.K.
X.L. Peng
Affiliation:
Material Science dept, Cambridge University, Cambridge., U.K.
G. Adamopoulos
Affiliation:
Electronic Materials & Devices, Dept of Engineering, Cambridge University, Cambridge. CB2 1PZ., U.K.
J. Robertson
Affiliation:
Electronic Materials & Devices, Dept of Engineering, Cambridge University, Cambridge. CB2 1PZ., U.K.
W.I. Milne
Affiliation:
Electronic Materials & Devices, Dept of Engineering, Cambridge University, Cambridge. CB2 1PZ., U.K.
T.W. Clyne
Affiliation:
Material Science dept, Cambridge University, Cambridge., U.K.
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Abstract

Very low threshold field emission from undoped microcrystalline diamond films grown by the hot filament chemical vapour deposition process (HFCVD) is reported. The effect of crystal size, methane concentration and the temperature has been studied. The microcrystalline diamond films grown using 3% methane (CH4) / hydrogen (H2) gas mixture ratio under varying deposition temperatures exhibit very low emission threshold fields. The threshold fields varied from 0.4 V/ [.proportional]m to 1 V/[.proportional]m for an emission current density of 1 [.proportional]A/cm2. A correlation between the emission characteristics and the material properties is presented. These films exhibit an emission site density of ∼ 104−105/cm2 at an applied field of 3 V/[.proportional]m.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q5.3.1
Copyright
Copyright © Materials Research Society 2000

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References

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