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Crystalline Growth of Wurtzite GaN on (111) GaAs

Published online by Cambridge University Press:  25 February 2011

J. Ross ,
M. Rubin  and
T. K. Gustafson
J. Ross
Affiliation:
University of California, Department of Electrical Engineering, Berkeley, CA 94720
M. Rubin
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
T. K. Gustafson
Affiliation:
University of California, Department of Electrical Engineering, Berkeley, CA 94720
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Abstract

Gallium Nitride films were grown on (111) Gallium Arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite GaN films grew epitaxially in basal orientation on (111) GaAs substrates. Heteroepitaxy was observed for growth temperatures between 550–600°C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17°. Possible surface reconstructions to explain the epitaxial growth are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 457
Copyright
Copyright © Materials Research Society 1992

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References

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