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Epitaxial growth of Si nanowires by a modified VLS method using molten Ga as growth assistant

Published online by Cambridge University Press:  01 February 2011

Annika Gewalt ,
Bodo Kalkofen ,
Marco Lisker  and
Edmund P. Burte
Annika Gewalt
Affiliation:
annika.gewalt@ovgu.de, Otto-von-Guericke University, Institute of Micro and Sensor Systems, Magdeburg, Germany
Bodo Kalkofen
Affiliation:
bodo.kalkofen@ovgu.de, Otto-von-Guericke University, Institute of Micro and Sensor Systems, Magdeburg, Saxony-Anhalt, Germany
Marco Lisker
Affiliation:
marco.lisker@ovgu.de, Otto-von-Guericke University, Institute of Micro and Sensor Systems, Magdeburg, Saxony-Anhalt, Germany
Edmund P. Burte
Affiliation:
edmund.burte@ovgu.de, Otto-von-Guericke University, Institute of Micro and Sensor Systems, Magdeburg, Saxony-Anhalt, Germany
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Abstract

In this paper the deposition and morphological characterization of gallium island structures on silicon and first results of silicon wire growth assisted by the created gallium droplets is presented. The islands and wires were grown on (111)-oriented single crystalline p-doped silicon substrates by microwave plasma enhanced chemical vapor deposition (MW PECVD) using trimethylgallium (TMGa) and silane (SiH4) as precursors for island and wire growth, respectively. The samples were investigated by SEM, EDS, XPS, and AFM.

Keywords

Gananoscaleplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1144: Symposium LL – Nanowires–Systhesis, Properties, Assembly and Applications , 2008 , 1144-LL03-11
Copyright
Copyright © Materials Research Society 2009

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References

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