Hostname: page-component-7c8c6479df-p566r Total loading time: 0 Render date: 2024-03-29T07:21:17.030Z Has data issue: false hasContentIssue false

Strain States in YSZ / RE2O3 (RE = Er, Y) Multilayers as a Function of Layer Thickness and Their Effect on Interface Conductivity and Diffusion

Published online by Cambridge University Press:  03 May 2013

J. Keppner
Affiliation:
Institut of Energy and Climate Research, IEK-3: Electrochemical Process Engineering;
C. Korte
Affiliation:
Institut of Energy and Climate Research, IEK-3: Electrochemical Process Engineering;
J. Schubert
Affiliation:
Peter Grünberg Institute, PGI-9: Semiconductor Nanoelectronics; JARA: Fundamentals of Future Information Technologies;
W. Zander
Affiliation:
Peter Grünberg Institute, PGI-9: Semiconductor Nanoelectronics; JARA: Fundamentals of Future Information Technologies;
M. Ziegner
Affiliation:
IEK-2: Material Structure and Properties; Forschungszentrum Jülich GmbH, Leo-Brandt Straße 1, 52425 Jülich, Germany
D. Stolten
Affiliation:
Institut of Energy and Climate Research, IEK-3: Electrochemical Process Engineering;
Get access

Abstract

In this study the strain states in alternating multilayers of an extrinsic O2− ion conductor yttria stabilized zirconia (YSZ) and an insulator RE2O3 (RE = Er, Y) are investigated as a function of the layer thickness. Multilayers with narrow columnar crystallites and coherent phase boundaries were grown by pulsed laser deposition (PLD). A detailed strain analysis is performed by X-Ray Diffraction XRD, measuring distinct reflections in and perpendicular to the interface planes. Because of small columnar crystallites in the layers, the interfacial strain decays by shear with increasing distance from the interface. The extent of the strained interface regions in the YSZ layers is estimated from XRD data. By using a quantitative analytical model based on the pressure dependence of the free migration enthalpy for vacancies the results are compared to former published experimental data on O2− ion conductivity and diffusion.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Garcia-Barriocanal, J., et al. ., Nature, 321, 676 (2008).Google Scholar
Maier, J., J Phys Chem Solids, 46, 309 (1985).CrossRefGoogle Scholar
Maier, J., Prog Solid St Chem, 23, 171 (1995).CrossRefGoogle Scholar
Aydin, H., et al. ., Physical Chemistry Chemical Physics, 15, 1944 (2013).CrossRefGoogle Scholar
Korte, C., et al. ., Physical chemistry chemical physics: PCCP, 10, 4623 (2008).CrossRefGoogle Scholar
Korte, C., et al. ., Monatshefte für Chemie - Chemical Monthly, 140, 1069 (2009).CrossRefGoogle Scholar
Peters, A., et al. ., Solid State Ionics, 178, 67 (2007).CrossRefGoogle Scholar
Schichtel, N., et al. ., Physical chemistry chemical physics: PCCP, 11, 3043 (2009).CrossRefGoogle Scholar
Schichtel, N., et al. ., Physical chemistry chemical physics: PCCP, 12, 14596 (2010).CrossRefGoogle Scholar
Birkholz, M., Thin Film Analysis by X-Ray Scattering, p. I, Wiley-VCH Verlag GmbH & Co. KGaA (2006).Google Scholar
Dolle, H., Journal of Applied Crystallography, 12, 489 (1979).CrossRefGoogle Scholar
Fischer, A., Crystal Research and Technology, 18, 1415 (1983).CrossRefGoogle Scholar
Fischer, A., et al. ., Semiconductor Science and Technology, 9, 2195 (1994).CrossRefGoogle Scholar
Stoica, T. and Vescan, L., Journal of Crystal Growth, 131, 32 (1993).CrossRefGoogle Scholar
Luryi, S. and Suhir, E., Applied Physics Letters, 49, 140 (1986).CrossRefGoogle Scholar
Murakami, M., Thin Solid Films, 69, 253 (1980).CrossRefGoogle Scholar
Stritzker, B., et al. ., Journal of the Less Common Metals, 164165, Part 1, 279 (1990).CrossRefGoogle Scholar
Kushi, T., et al. ., ECS Transactions, 25, 1673 (2009).CrossRefGoogle Scholar