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Ultrafast Photostriction in Thin Film Bismuth Ferrite and its Correlation to Electronic Dynamics

Published online by Cambridge University Press:  18 March 2013

Yuelin Li ,
Haidan Wen ,
Pice Chen ,
Margaret P. Cosgriff ,
Donald Walko ,
June Hyuk Lee ,
Carolina Adamo ,
Richard Schaller ,
Clare Rowland  and
Christian Schlepuetz
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Yuelin Li*
Affiliation:
X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
Haidan Wen
Affiliation:
X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
Pice Chen
Affiliation:
Department of Materials Science and Engineering and Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Margaret P. Cosgriff
Affiliation:
Department of Materials Science and Engineering and Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Donald Walko
Affiliation:
X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
June Hyuk Lee
Affiliation:
X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
Carolina Adamo
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
Richard Schaller
Affiliation:
Center for Nanoscale Materials,Argonne National Laboratory, Argonne, Illinois 60439, USA Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
Clare Rowland
Affiliation:
Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
Christian Schlepuetz
Affiliation:
X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
Eric Dufresne
Affiliation:
X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
Qingteng Zhang
Affiliation:
Department of Materials Science and Engineering and Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Carlos Giles
Affiliation:
Universidade Estadual de Campinas, 13083-859 Campinas, SP, Brazil
Darrell Schlom
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
John Freeland
Affiliation:
X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
Paul Evans
Affiliation:
Department of Materials Science and Engineering and Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
*
*ylli@aps.anl.gov
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Abstract

A series of laser pump, x-ray probe experiments show that above band gap photoexcitation can generate a large out-of-plane strain in multiferroic BiFeO3 thin films. The strain decays in a time scale that is the same as the photo-induced carriers measured in an optical transient absorption spectroscopy experiment. We attribute the strain to the piezoelectric effect due to screening of the depolarization field by laser induced carriers. A strong film thickness dependence of strain and carrier relaxation is also observed, revealing the role of the carrier transport in determining the structural and carrier dynamics in complex oxide thin films.

Keywords

photovoltaicx-ray diffraction (XRD)ferroelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1528: Symposium VV – Advanced Materials Exploration with Neutrons and Synchrotron X-Rays , 2013 , mrsf12-1528-vv11-09
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

Catlan, G. and Scott, J. F., Advanced Mat. 21, 2463 (2009).CrossRefGoogle Scholar
Wang, J. et al. ., Science 299, 1719 (2003).CrossRefGoogle Scholar
Zhao, T. et al. , Nat Mat. 5, 823 (2006).CrossRefGoogle Scholar
Lebeugle, D., et al. ., Phys. Rev. Lett. 100, 227602 (2008).CrossRefGoogle Scholar
Nakashima, S. et al. ., J. Appl. Phys. 105, 061617 (2009).CrossRefGoogle Scholar
Wen, H. et al. ., Phys. Rev. Lett., in press.Google Scholar
Kundys, B. et al. , Nat. Mat. 9, 803 (2010).CrossRefGoogle Scholar
Daranciang, D. et al. . Phys. Rev. Lett. 108, 087601 (2012).CrossRefGoogle Scholar
Tefft, W.E., Phys. Rev. 164, 1032 (1967).CrossRefGoogle Scholar
Sasamoto, S., et al. , J. Appl. Phys. 105, 083102 (2009).CrossRefGoogle Scholar
Vasiliu-Doloc, L., et al. ., Phys. Rev. Lett. 83, 4393 (1999).CrossRefGoogle Scholar
Fiorentini, V. et al. ., Phys. Rev. B 60, 8849 (1999).CrossRefGoogle Scholar