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Ultra thin transition metal oxide coatings on diamond for thermionic applications

Published online by Cambridge University Press:  20 December 2012

Amit K. Tiwari
Affiliation:
Electrical and Electronic Engineering, Newcastle University, NE1 7RU, UK
Jonathan P. Goss
Affiliation:
Electrical and Electronic Engineering, Newcastle University, NE1 7RU, UK
Patrick R. Briddon
Affiliation:
Electrical and Electronic Engineering, Newcastle University, NE1 7RU, UK
Nick G. Wright
Affiliation:
Electrical and Electronic Engineering, Newcastle University, NE1 7RU, UK
Alton B. Horsfall
Affiliation:
Electrical and Electronic Engineering, Newcastle University, NE1 7RU, UK
Mark J. Rayson
Affiliation:
Eng. Science and Mathematics, Luleå University of Technology, Luleå S–97187, Sweden
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Abstract

We have investigated, using density functional simulations, the energetics and the electronic properties of oxides of selected transition metals, TMs, adsorbed onto a dia-mond (001) surface. We find that stoichiometric oxides of TMs, particularly Ti and Zn,influence the electron affinity of diamond strongly. The electron affinities of stoichiomet-ric oxides of Ti and Zn are calculated to be around −3 eV, significantly higher than 1.9 eV of commonly used H–termination. The reactions of TMs with an oxygenated diamond are found to be highly exothermic. Based upon the energetics and the electronic properties, we propose that in the regime of ultra thin films, oxides of TMs are promising options for surface coating of diamond–based electron emitters, as these coatings are compatible with semiconductor device fabrication processes, while having the benefit of inducing a large negative electron affinity.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

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References

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