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Proton formation and diffusion in amorphous SiNx:H

Published online by Cambridge University Press:  11 August 2011

H.F.W. Dekkers
Affiliation:
FPS, imec, Kapeldreef 75, 3001 Leuven, Belgium
V. Prajapati
Affiliation:
SSET, imec, Kapeldreef 75, 3001 Leuven, Belgium.
S. Van Elshocht
Affiliation:
FPS, imec, Kapeldreef 75, 3001 Leuven, Belgium
E. Vancoille
Affiliation:
FPS, imec, Kapeldreef 75, 3001 Leuven, Belgium
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Abstract

In this work the release of atomic hydrogen from SiNx:H films is investigated. Thermal treatment as well as UV-illumination induces the formation of H2, increasing the tensile stress in the film. N-rich SiNx:H films release hydrogen only by UV-illumination, indicating involvement of charge trapping. Ab initio calculations show a possible reaction path for the release and diffusion of protons that also explain the diffusion of hydrogen into Si substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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