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Plastic Relaxation Mechanics in Systems with a Twist-Bonded Layer

Published online by Cambridge University Press:  11 February 2011

Catherine Priester
Affiliation:
IEMN/ISEN, CNRS-UMR 8520, BP 69 F-59625, Villeneuve d'Ascq Cedex, FRANCE.
Geneviève Grenet
Affiliation:
ECL/LEOM, CNRS-UMR 5512, BP 163 F-69131, Ecully, Cedex, FRANCE
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Abstract

With a view to investigating how a thin film twist-bonded to a host substrate can have compliant behavior from a plasticity point of view, the onset and spread of edge dislocations throughout a mesa are studied. The discussion focuses on the energy relaxed by such dislocations in a mesa made from two coherently bonded lattice-mismatched layers twist-bonded onto a host substrate and patterned down to the film/host substrate interface. Our theoretical results show that the confinement of threading dislocations into a thin twist-bonded film is energetically favorable allowing the overgrowth of a mismatched layer exempt of any threading dislocation at least as far as mesas are concerned.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Lo, Y.H., Appl. Phys. Lett. 59, 2311(1991)Google Scholar
2. Kästner, G. and Gösele, U., J. Appl. Phys. 88, 4048, (2000).Google Scholar
3. Brown, A.S. and Doolittle, W.A., Appl. Surf. Sci., 166, 392, (2000 ).Google Scholar
4. Bourret, A., Appl. Surf. Sci., 164, 3, (2000).Google Scholar
5. Vanhollebeke, K., Moerman, I., Van Daele, P. and Demeester, P., Progress in Crystal Growth and Characterization of materials 41, 1 (2000).Google Scholar
6. Sridhar, N., Srolovitz, D.J., Suo, Z., Appl. Phys. Lett. 78, 2482 (2001).Google Scholar
7. Yin, H., Huang, R., Hobart, K.D., Suo, Z., Kuan, T.S., Inoki, C.K., Shieh, S.R., Duffy, T.S., Kub, F.J., and Sturm, J.C., J. Appl. Phys. 91, 9716 (2002)Google Scholar
8. Ejeckam, F.E., Lo, Y.H., Subramania, S., Hou, H.Q., and Hammons, B.E., Appl. Phys. Lett. 70, 1685(1997).Google Scholar
9. Ejeckam, F.E., Seaford, M.L., Lo, Y.H., Hou, H.Q., and Hammons, B.E., Appl. Phys. Lett. 71, 776 (1997).Google Scholar
10. Zhu, Z.H., Zhou, R., Ejeckam, F.E., Zhang, Z., Zhang, J., Greenberg, J., Lo, Y.H., Hou, H.Q., and Hammons, B.E., Appl. Phys. Lett. 72, 2598 (1998).Google Scholar
11. Tan, T.Y., and Gösele, U., Appl. Phys. A 64, 631 (1997).Google Scholar
12. Kästner, G., Tan, T.Y., and Gösele, U., Appl. Phys. A 66, 13 (1998).Google Scholar
13. Obayashi, Y. and Shintani, K., J. Appl. Phys 88, 105 (2000); J. Appl. Phys 88, 5623 (2000).Google Scholar
14. Rohart, S., Grenet, G. and Priester, C., Appl. Surf. Sci., 188, 193 (2002)Google Scholar