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Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD

Published online by Cambridge University Press:  16 January 2014

Mei Shen ,
Amir Afshar ,
Manisha Gupta ,
Gem Shoute ,
Ken Cadien ,
Ying Yin Tsui  and
Doug Barlage
Mei Shen
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Alberta, Canada.
Amir Afshar
Affiliation:
Department of Chemical and Material Engineering, University of Alberta, Alberta, Canada.
Manisha Gupta
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Alberta, Canada.
Gem Shoute
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Alberta, Canada.
Ken Cadien
Affiliation:
Department of Chemical and Material Engineering, University of Alberta, Alberta, Canada.
Ying Yin Tsui
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Alberta, Canada.
Doug Barlage
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Alberta, Canada.
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Abstract

An electrical and analytical study was carried out to investigate TiW/ZnO Schottky contacts with 30 nm ZnO thin film layers deposited by pulsed laser deposition (PLD), plasma enhanced atomic layer deposition (PEALD), and thermal atomic layer deposition (TALD). Devices with ZnO layer deposited by TALD exhibit approximately linear behavior in their I-V measurements. However, both devices with ZnO layers deposited by PEALD and PLD behaved like Schottky rectifiers with barrier heights between TiW and ZnO of 0.51 eV and 0.45 eV respectively and ideality factors of 2.0 and 2.3 respectively. The PEALD deposited ZnO Schotty diodes demonstrated an on/off rectifying ratio of about 25 at ±1 V. The leakage current values of the PLD deposited ZnO Schottky diodes are significantly larger than those of PEALD, leading to a poor on/off rectifying ratio of ∼4. Due to the small thickness, a critical breakdown strength of 1.3 MV/cm was estimated for PEALD-ZnO thin films.

Keywords

atomic layer depositionII-VIelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 127 - 132
Copyright
Copyright © Materials Research Society 2014 

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