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Growth and Field Emission Properties of Boron Nitride Island Films by Low-energy Ion-assisted Deposition

Published online by Cambridge University Press:  07 March 2011

K. Teii ,
J. H. C. Yang ,
R. Yamao  and
S. Matsumoto
K. Teii
Affiliation:
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
J. H. C. Yang
Affiliation:
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
R. Yamao
Affiliation:
Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
S. Matsumoto
Affiliation:
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-004, Japan and Ceramic Forum Co. Ltd., 1-6-6 Taitoh, Taitoh-ku, Tokyo 110-0016, Japan.
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Abstract

We report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for initial sp2-bonded BN and subsequent cubic BN (cBN) phases by using low-energy (~20 eV) ion bombardment. Ultraviolet photoelectron spectroscopy indicates that the electron affinity is as low as 0.3 eV for both sp2-bonded BN and cBN phases. The evolution of cBN islands reduces the turn-on field down to around 9 V/μm and increases the current density up to 10-4 A/cm2. The surface potential barrier height is estimated to be about 3.4 eV for emission from the Fermi level.

Keywords

plasma-enhanced CVD (PECVD) (deposition)field emissionnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1307: Symposium CC – Boron and Boron Compounds—From Fundamentals to Applications , 2011 , mrsf10-1307-cc06-03
Copyright
Copyright © Materials Research Society 2011

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References

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