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Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts

Published online by Cambridge University Press:  01 February 2011

Jason L. Johnson
Affiliation:
antural@ece.ufl.edu, University of Florida, Electrical and Computer Engineering, 530 ENG Bldg. #33, Gainesville, FL, 32611, United States
Ashkan Behnam
Affiliation:
inri80@ufl.edu, University of Florida, Electrical and Computer Engineering, Gainesville, FL, 32611, United States
Yongho Choi
Affiliation:
inri80@ufl.edu, University of Florida, Electrical and Computer Engineering, Gainesville, FL, 32611, United States
Leila Noriega
Affiliation:
inri80@ufl.edu, University of Florida, Electrical and Computer Engineering, Gainesville, FL, 32611, United States
Gunhan Ertosun
Affiliation:
inri80@ufl.edu, Stanford University, Department of Electrical Engineering, Stanford, CA, 94305, United States
Zhuangchun Wu
Affiliation:
inri80@ufl.edu, University of Florida, Department of Physics, Gainesville, FL, 32611, United States
Andrew G. Rinzler
Affiliation:
inri80@ufl.edu, University of Florida, Department of Physics, Gainesville, FL, 32611, United States
Pawan Kapur
Affiliation:
inri80@ufl.edu, Stanford University, Department of Electrical Engineering, Stanford, CA, 94305, United States
Krishna C. Saraswat
Affiliation:
inri80@ufl.edu, Stanford University, Department of Electrical Engineering, Stanford, CA, 94305, United States
Ant Ural
Affiliation:
antural@ece.ufl.edu, University of Florida, Electrical and Computer Engineering, Gainesville, FL, 32611, United States
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Abstract

We experimentally study the dark and photocurrent in metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film Schottky contacts on GaAs. We find that above ∼260°K, thermionic emission of electrons with a barrier height of ∼0.54 eV is the dominant dark current transport mechanism. Furthermore, MSM devices with CNT film electrodes exhibit a higher photocurrent-to-dark current ratio while maintaining a comparable responsivity relative to control devices. This work demonstrates that nanotube films can be integrated as Schottky electrodes in conventional semiconductor optoelectronic devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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