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Anomalous Branch-structured Carbon Nanotubes on Silicon Substrates

Published online by Cambridge University Press:  01 February 2011

Yaser Abdi
Affiliation:
abdi@khayam.ut.ac.ir, Thin Film and Nano-Electronics Lab, School of Electrical and Computer Engineering, University of Tehran, Tehran, 14395515, Iran
Shams Mohajerzadeh
Affiliation:
smohajer@tfl.ir, Thin Film and Nano-Electronics Lab, School of Electrical and Computer Engineering, University of Tehran, Tehran, 14395515, Iran
Kokab Baghbani
Affiliation:
Thin Film and Nano-Electronics Lab, School of Electrical and Computer Engineering, University of Tehran, Tehran, 14395515, Iran
Sara Paydavosi
Affiliation:
Thin Film and Nano-Electronics Lab, School of Electrical and Computer Engineering, University of Tehran, Tehran, 14395515, Iran
Ebrahim Asl Soleimani
Affiliation:
Thin Film and Nano-Electronics Lab, School of Electrical and Computer Engineering, University of Tehran, Tehran, 14395515, Iran
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Abstract

We have grown vertically-aligned carbon nanotubes on (100) silicon substrates by means of a plasma enhanced chemical vapor deposition method. The growth of CNTs is achieved by a mixture of hydrogen and acetylene gases in a CVD reactor and a 2-5nm thick nickel is used as the seed for the growth. Following the growth of nanotubes on the silicon substrates, they are covered by a titanium-oxide layer and then the substrate is placed back into the original chamber to expose to a hydrogen plasma. Depending on the hydrogenation step, the nickel seed layer, which is placed on the tip side of the original nanotube, is expanded. The subsequent process in the same reactor leads to the growth of carbon nanotubes in a branched manner. Scanning electron microscopy has been used to investigate the results of such tree-like nanostructures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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