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Progress in organic single-crystal field-effect transistors

Published online by Cambridge University Press:  14 January 2013

Ignacio Gutiérrez Lezama
Affiliation:
Department of Condensed Matter Physics, École de Physique, Geneva, Switzerland; Ignacio.gutierrez@unige.ch
Alberto F. Morpurgo
Affiliation:
Department of Condensed Matter Physics, École de Physique, Geneva, Switzerland; Alberto.morpurgo@unige.ch
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Abstract

Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations, and, more generally, the intrinsic transport properties of organic semiconductors. These topics are now being investigated through the study of transport in organic transistors realized using molecular single crystals of unprecedented chemical purity and structural quality. These studies are elucidating detailed microscopic aspects of the physics of organic semiconductors and corresponding devices and have also led to unforeseen high values for carrier mobility in these materials. Here, we discuss developments in this area and present a brief outlook on future goals that have come into experimental reach.

Type
Research Article
Copyright
Copyright © Materials Research Society 2013

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References

Gelinck, G.H., Huitema, H.E.A., van Veenendaal, E., Cantatore, E., Schrijnemakers, L., van der Putten, J.B.P.H., Geuns, T.C.T., Beenhakkers, M., Giesbers, J.B., Huisman, B.-H., Meijer, E.J., Mena Benito, E., Touwslager, F.J., Marsman, A.W., van Rens, B.J.E., de Leeuw, D.M., Nat. Mater. 3, 106 (2004).CrossRefGoogle Scholar
Forrest, S.R., Nature 428, 911 (2004).CrossRefGoogle Scholar
Sekitani, T., Nakajima, H., Maeda, H., Fukushima, T., Aida, T., Hata, K., Someya, T., Nat. Mater. 8, 494 (2009).CrossRefGoogle Scholar
Sekitani, T., Someya, T., Adv. Mater. 22, 2228 (2010).Google Scholar
Facchetti, A., Chem. Mater. 23, 733 (2011).Google Scholar
Usta, H., Facchetti, A., Marks, T.J., Acc. Chem. Res. 44, 501 (2011).Google Scholar
Sekitani, T., Someya, T., Mater. Today 14, 398 (2011).Google Scholar
Horowitz, G., Garnier, F., Yassar, A., Hajlaoui, R., Kouki, F., Adv. Mater. 8, 52 (1996).Google Scholar
Podzorov, V., Pudalov, V.M., Gershenson, M.E., Appl. Phys. Lett. 82, 1739 (2003).CrossRefGoogle Scholar
De Boer, R.W.I., Klapwijk, T.M., Morpurgo, A.F., Appl. Phys. Lett. 83, 4345 (2003).Google Scholar
Takeya, J., Goldmann, C., Haas, S., Pernstich, K.P., Ketterer, B., Batlogg, B., J. Appl. Phys. 94, 5800 (2003).Google Scholar
Butko, V.Y., Chi, X., Lang, D.V., Ramirez, A.P., Appl. Phys. Lett. 83, 4773 (2003).Google Scholar
Goldmann, C., Haas, S., Krellner, C., Pernstich, K.P., Gundlach, D.J., Batlogg, B., J. Appl. Phys. 96, 2080 (2004).Google Scholar
Panzer, M.J., Frisbie, C.D., Appl. Phys. Lett. 88, 203504 (2006).Google Scholar
Takahashi, T., Takenobu, T., Takeya, J., Iwasa, Y., Appl. Phys. Lett. 88, 033505 (2006).Google Scholar
Gershenson, M.E., Podzorov, V., Morpurgo, A.F., Rev. Mod. Phys. 78, 973 (2006).Google Scholar
Reese, C., Bao, Z., Mater. Today 10, 20 (2007).Google Scholar
Hasegawa, T., Takeya, J., Sci. Technol. Adv. Mater. 10, 024314 (2009).Google Scholar
De Boer, R.W.I., Gershenson, M.E., Morpurgo, A.F., Podzorov, V., Phys. Status Solidi A 201, 1302 (2004).CrossRefGoogle Scholar
Mas-Torrent, M., Durkut, M., Hadley, P., Ribas, X., Rovira, C., J. Am. Chem. Soc. 126, 984 (2004).Google Scholar
Briseno, A.L., Mannsfeld, S.C.B., Ling, M.M., Liu, S., Tseng, R.J., Reese, C., Roberts, M.E., Yang, Y., Wudl, F., Bao, Z., Nature 444, 913 (2006).Google Scholar
Menard, E., Podzorov, V., Hur, S.-H., Gaur, A., Gershenson, M.E., Rogers, J.A., Adv. Mater. 16, 2097 (2004).Google Scholar
Sundar, V.C., Zaumseil, J., Podzorov, V., Menard, E., Willet, R.L., Someya, T., Gershenson, M.E., Rogers, J.A., Science 303, 1644 (2004).CrossRefGoogle Scholar
Podzorov, V., Menard, E., Borissov, A., Kiryukhin, V., Rogers, J.A., Gershenson, M.E., Phys. Rev. Lett. 93, 086602 (2004).Google Scholar
Podzorov, V., Menard, E., Rogers, J.A., Gershenson, M.E., Phys. Rev. Lett. 95, 226601 (2005).Google Scholar
Xie, H., Alves, H., Morpurgo, A.F., Phys. Rev. B 80, 245305 (2009).Google Scholar
Minder, N.A., Ono, S., Chen, Z., Facchetti, A., Morpurgo, A.F., Adv. Mater. 24, 503 (2012).Google Scholar
Horowitz, G., Hajlaoui, M.E., Hajlaoui, R., J. Appl. Phys. 87, 4456 (2000).CrossRefGoogle Scholar
Dimitrakopoulos, C.D., Malenfant, P.R.L., Adv. Mater. 14, 99 (2004).Google Scholar
Carlo, A. Di., Piacenza, F., Bolognesi, A., Stadlober, B., Maresch, H.. Appl. Phys. Lett. 86, 263501 (2005).Google Scholar
Lee, J.Y., Roth, S., Park, Y.W., Appl. Phys. Lett. 88, 252106 (2006).CrossRefGoogle Scholar
Li, R., Jiang, L., Meng, Q., Gao, J., Li, H., Tang, Q., He, M., Hu, W., Liu, Y., Zhu, D., Adv. Mater. 21, 4492 (2009).Google Scholar
Stassen, A.F., de Boer, R.W.I., Iosad, N.N., Morpurgo, A.F., Appl. Phys. Lett. 85, 3899 (2004).CrossRefGoogle Scholar
Hulea, I.N., Fratini, S., Xie, H., Mulder, C.L., Iossad, N.N., Rastelli, G., Ciuchi, S., Morpurgo, A.F., Nat. Mater. 5, 982 (2006).Google Scholar
Molinari, A., Gutiérrez, I., Hulea, I.N., Russo, S., Morpurgo, A.F., Appl. Phys. Lett. 90, 212103 (2007).Google Scholar
Molinari, A.S., Gutiérrez Lezama, I., Parisse, P., Takenobu, T., Iwasa, Y., Morpurgo, A.F., Appl. Phys. Lett. 92, 133303 (2008).CrossRefGoogle Scholar
Gutiérrez Lezama, I., Morpurgo, A.F., Phys. Rev. Lett. 103, 066803 (2009).CrossRefGoogle Scholar
Gutiérrez Lezama, I., Nakano, M., Minder, N.A., Chen, Z., Di Girolamo, F.V., Facchetti, A., Morpurgo, A.F., Nat. Mater. 11, 788 (2012).Google Scholar
Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).Google Scholar
Lampart, M.A., Mark, P., Current Injection in Solids (Academic Press, New York, 1970).Google Scholar
de Boer, R.W.I., Jochemsen, M., Klapwijk, T.M., Morpurgo, A.F., Niemax, J., Tripathi, A.K., Pflaum, J., J. Appl. Phys. 95, 1196 (2004).CrossRefGoogle Scholar
de Boer, R.W.I., Morpurgo, A.F., Phys. Rev. B 72, 073207 (2005).Google Scholar
Andrews, J.M., Lepselter, M.P., Solid-State Electron. 13, 1011 (1969).Google Scholar
Rhoderick, E.H., Metal-Semiconductor Contacts (Clarendon, Oxford, UK, 1980).Google Scholar
Kaji, T., Takenobu, T., Morpurgo, A.F., Iwasa, Y., Adv. Mater. 21, 3689 (2009).CrossRefGoogle Scholar
Pope, M., Swenberg, C.E., Electronic Processes in Organic Crystals and Polymers, 2nd ed. (Oxford University Press, New York, 1999).Google Scholar
Silinsh, E.A., Cápek, V., Organic Molecular Crystals: Interaction, Localization, and Transport Phenomena (AIP, New York, 1994).Google Scholar
Troisi, A., Orlandi, G., Phys. Rev. Lett. 96, 086601 (2006).Google Scholar
Fratini, S., Ciuchi, S., Phys. Rev. Lett. 103, 266601 (2009).Google Scholar
Liu, C., Minari, T., Lu, X., Kumatani, A., Takimiya, K., Tsukagoshi, K., Adv. Mater. 23, 523 (2011).Google Scholar
Takeya, J., Tsukagoshi, K., Aoyagi, Y., Takenobu, T., Iwasa, Y., Jpn. J. Appl. Phys. 44, L1393 (2005).Google Scholar
Warta, W., Karl, N., Phys. Rev. B 32, 1172 (1985).Google Scholar
Hannewald, K., Bobbert, P.A., Phys. Rev. B 69, 075212 (2004).Google Scholar
Troisi, A., Orlandi, G., J. Phys. Chem. A 110, 4065 (2006).Google Scholar
Picon, J.-D., Bussac, M.N., Zuppiroli, L., Phys. Rev. B 75, 235106 (2007).Google Scholar
Troisi, A., J. Chem. Phys. 134, 034702 (2011).Google Scholar
Veres, J., Ogier, S.D., Leeming, S.W., Cupertino, D.C., Khaffaf, S.M., Adv. Funct. Mater. 13, 199 (2003).Google Scholar
Richards, T., Bird, M., Sirringhaus, H., J. Chem. Phys. 128, 234905 (2008).Google Scholar
Kirova, N., Bussac, M.-N., Phys. Rev. B 68, 235312 (2003).Google Scholar
Konezny, S.J., Bussac, M.N., Zuppiroli, L., Phys. Rev. B 81, 045313 (2010).Google Scholar
Fratini, S., Morpurgo, A.F., Ciuchi, S., J. Phys. Chem. Solids 69, 2195 (2008).Google Scholar
Chua, L.-L., Zaumseil, J., Chang, J.-F., Ou, E.C.-W., Ho, P.K.-H., Sirringhaus, H., Friend, R.H., Nature 434, 194 (2005).Google Scholar
Fratini, S., Xie, H., Hulea, I.N., Ciuchi, S., Morpurgo, A.F., New J. Phys. 10, 033031 (2008).Google Scholar
Krellner, C., Haas, S., Goldmann, C., Pernstich, K.P., Gundlach, D.J., Batlogg, B., Phys. Rev. B 75, 245115 (2007).Google Scholar
Alves, H., Molinari, A.S., Xie, H., Morpurgo, A.F., Nat. Mater. 7, 574 (2008).Google Scholar
Nakano, M., Alves, H., Molinari, A.S., Ono, S., Minder, N., Morpurgo, A.F., Appl. Phys. Lett. 96, 232102 (2010).Google Scholar
Martin, J., Akerman, N., Ulbricht, G., Lohmann, T., Smet, J.H., Von Klitzing, K., Yacoby, A., Nat. Phys. 4, 144 (2008).CrossRefGoogle Scholar