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Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemes

Published online by Cambridge University Press:  03 March 2011

Yu Zhu ,
Kathleen A. Dunn  and
Alain E. Kaloyeros
Yu Zhu
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany, State University of New York, Albany, New York, 12203
Kathleen A. Dunn
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany, State University of New York, Albany, New York, 12203
Alain E. Kaloyeros*
Affiliation:
College of Nanoscale Science and Engineering, The University at Albany, State University of New York, Albany, New York, 12203
*
b) Address all correspondence to this author. e-mail: akaloyeros@uamail.albany.edu
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Abstract

A thermal metalorganic atomic layer deposition (ALD) process was developed for the in situ, sequential growth of Pt/TaNx stacks for use as barrier/seed stacks for subsequent copper electroplating. Ultrathin platinum films were deposited by alternating pulses of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen (O2) as co-reactants. An ALD process window was established and optimized by investigating saturation of Pt film-growth rate versus MeCpPtMe3 and O2 exposure as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (300 °C) ALD Pt process yielded uniform and continuous Pt films with typical carbon and oxygen impurity levels around, respectively, 2.5 and 1 at.%. Film conformality was nearly 100% in 120-nm trench structures with 11:1 aspect ratio.

Keywords

Atomic layer depositionBarrier layerElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 5 , May 2007 , pp. 1292 - 1298
Copyright
Copyright © Materials Research Society 2007

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References

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