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Electrical transport in the ferromagnetic state of silver substituted manganites La1−xAgxMnO3 (x = 0.05 and 0.1)

Published online by Cambridge University Press:  28 January 2015

Dinesh Varshney ,
Dinesh Choudhary  and
Elias Khan
Dinesh Varshney*
Affiliation:
Materials Science Laboratory, School of Physics, Devi Ahilya University, Indore 452001, India
Dinesh Choudhary
Affiliation:
Materials Science Laboratory, School of Physics, Devi Ahilya University, Indore 452001, India
Elias Khan
Affiliation:
Materials Science Laboratory, School of Physics, Devi Ahilya University, Indore 452001, India
*
a)Address all correspondence to this author. e-mail: vdinesh33@rediffmail.com
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Abstract

The present study focuses on a quantitative analysis of electrical resistivity in monovalent-doped manganites La1−xAgxMnO3 (x = 0.05 and 0.1). The electrical resistivity data in the ferromagnetic (FM) metallic phase are analyzed by considering a temperature-independent inelastic scattering of the electrons (due to domain and grain boundaries, defects, etc.) and other temperature-dependent elastic scattering mechanisms (electron–electron, electron–phonon, and electron–magnon). The Debye and Einstein temperatures are deduced from the model Hamiltonian containing potential energy contribution from the long-range Coulomb, van der Waals (vdW) interaction, and short-range repulsive interaction up to the second-neighbor ions. The electron–phonon scattering partially describes the reported FM metallic resistivity behavior with temperature for La1−xAgxMnO3 (x = 0.05 and 0.1). The T2 and T4.5 terms accounting for electron–electron and electron–magnon interactions are essential for the correct description of resistivity. The Mott–Ioffe–Regel criterion for metallic conductivity is valid, and kFl ∼ 1, εFτ ∼ 1.

Keywords

manganitesDebye temperaturespin waveselectrical resistivity
Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 5 , 14 March 2015 , pp. 654 - 665
Copyright
Copyright © Materials Research Society 2014 

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References

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