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Stress evolution in Si during low-energy ion bombardment

Published online by Cambridge University Press:  25 November 2014

Yohei Ishii ,
Charbel S. Madi ,
Michael J. Aziz  and
Eric Chason
Yohei Ishii
Affiliation:
Brown University, School of Engineering, Providence, Rhode Island 02912, USA; and Hitachi High Technologies America, Inc, Semiconductor Equipment Division, Dallas, Texas 75261-2208, USA
Charbel S. Madi
Affiliation:
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA; and Department of Physics, American University of Beirut, Beirut 1107 2020, Lebanon
Michael J. Aziz
Affiliation:
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA
Eric Chason*
Affiliation:
Brown University, School of Engineering, Providence, Rhode Island 02912, USA
*
a)Address all correspondence to this author. e-mail: Eric_Chason@Brown.edu
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Abstract

Measurements of stress evolution during low-energy argon ion bombardment of Si have been made using a real-time wafer curvature technique. During irradiation, the stress reaches a steady-state compressive value that depends on the flux and energy. Once irradiation is terminated, the measured stress relaxes slightly in a short period of time to a final value. To understand the ion-induced stress evolution and relaxation mechanisms, we account for the measured behavior with a model for viscous relaxation that includes the ion-induced generation and annihilation of flow defects in an amorphous Si surface layer. The analysis indicates that bimolecular annihilation (i.e., defect recombination) is the dominant mechanism controlling the defect concentration both during irradiation and after the cessation of irradiation. From the analysis, we determine a value for the fluidity per flow defect.

Keywords

ion–solid interactionsdefectsradiation effects
Type
Articles
Information
Journal of Materials Research , Volume 29 , Issue 24 , 28 December 2014 , pp. 2942 - 2948
Copyright
Copyright © Materials Research Society 2014 

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References

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