a1 Laboratoire Aimé-Cotton, CNRS-Université Paris Sud 11, 91405 Orsay Cedex, France
a2 Institut de Physique de Rennes, UMR CNRS-Université de Rennes I 6251, 35042 Rennes Cedex, France
a3 Laboratoire de Photonique et Nanostructures, CNRS, 91460 Marcoussis, France
An experimental study of the delayed threshold phenomenon in a Vertical Extended Cavity Semiconductor Emitting Laser is carried out. Under modulation of the pump power, the laser intensity exhibits a time delay in the vicinity of the threshold. The evolution of this delay is measured as a function of the modulation frequency and is proved to follow the predicted scaling law. A model based on the rate equations is derived and used to analyze the experimental observations. A frequency variation of the laser around the delayed threshold and induced by the phase-amplitude coupling is predicted and estimated.
(Received February 21 2012)
(Revised March 13 2012)
(Accepted March 20 2012)
(Online publication March 30 2012)