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Structural, Optical, and Electrical Properties of Amorphous Hydrogenated Carbon Nitride

Published online by Cambridge University Press:  26 February 2011

He-Xiang Han  and
Bernard J. Feldman
He-Xiang Han
Affiliation:
University of Missouri-St. Louis, Department of Physics, St. Louis, MO 63121 Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Bernard J. Feldman
Affiliation:
University of Missouri-St. Louis, Department of Physics, St. Louis, MO 63121
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Abstract

Amorphous hydrogenated carbon nitride thin films have been grown by plasma decomposition of a feedstock of CH4 and N2. In the films with higher nitrogen concentration, the infrared absorption spectra are dominated by NH2 modes and give strong evidence of a polymeric structure. The optical absorption and photoluminescence spectra show that nitrogen incorporation decreases the bandgap and increases the structural order of these thin films. The undoped material is an insulator with resistivities up to 1015Q cm, but when doped with iron, it becomes a p-type degenerate semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 347
Copyright
Copyright © Materials Research Society 1987

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