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Determination of Boron Concentration in Doped Diamond Films

Published online by Cambridge University Press:  02 March 2011

S.N. Demlow ,
T.A. Grotjohn ,
T. Hogan ,
M. Becker  and
J. Asmussen
S.N. Demlow
Affiliation:
Michigan State University, Electrical and Computer Eng., East Lansing, MI 48824, U.S.A.
T.A. Grotjohn
Affiliation:
Michigan State University, Electrical and Computer Eng., East Lansing, MI 48824, U.S.A. Fraunhofer USA Center for Coatings and Laser Applications, East Lansing, MI 48824, U.S.A.
T. Hogan
Affiliation:
Michigan State University, Electrical and Computer Eng., East Lansing, MI 48824, U.S.A.
M. Becker
Affiliation:
Fraunhofer USA Center for Coatings and Laser Applications, East Lansing, MI 48824, U.S.A.
J. Asmussen
Affiliation:
Michigan State University, Electrical and Computer Eng., East Lansing, MI 48824, U.S.A. Fraunhofer USA Center for Coatings and Laser Applications, East Lansing, MI 48824, U.S.A.
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Abstract

The electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at a pressure of 160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration is investigated using infrared absorption, and compared to the boron concentration obtained by SIMS. A four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

Keywords

electrical propertiesdiamondchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1282: Symposium A – Diamond Electronics and Bioelectronics—Fundamentals to Applications IV , 2011 , mrsf10-1282-a05-15
Copyright
Copyright © Materials Research Society 2011

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References

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