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Voltage and Dopant Concentration Measurements of Semiconductors using a Band-Pass Toroidal Energy Analyzer Inside a Scanning Electron Microscope

Published online by Cambridge University Press:  30 July 2015

Avinash Srinivasan  and
Anjam Khursheed
Avinash Srinivasan*
Affiliation:
Department of Electrical and Computer Engineering, Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR), National University of Singapore, Singapore
Anjam Khursheed
Affiliation:
Department of Electrical and Computer Engineering, Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR), National University of Singapore, Singapore
*
*Corresponding author.eleavsr@nus.edu.sg
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Abstract

This paper presents experimental results obtained from a scanning electron microscope (SEM) second-order focusing toroidal electron energy analyzer attachment. The results demonstrate that the analyzer can be used to obtain high signal-to-noise voltage and dopant concentration measurements on semiconductors in the presence of different electric field conditions at the sample. The experimentally calculated relative error of measurement typically varies from 31 to 63, corresponding to secondary electron (SE) signal mean shifts of 9–18 mV. The millivolt accuracy of these results is over one order of magnitude better than earlier quantitative dopant concentration measurements made by a retarding field analyzer.

Keywords

dopant concentrationtoroidal energy analyzersurface microfieldsenergy filtered SE signalsvoltage measurement
Type
Materials Applications and Techniques
Information
Microscopy and Microanalysis , Volume 21 , Issue 4 , August 2015 , pp. 910 - 918
Copyright
© Microscopy Society of America 2015 

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