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Reliability Study of Organic Light-emitting Diodes by Continuous-wave and Pulsed Current Stressing

Published online by Cambridge University Press:  16 June 2015

X. M. Li ,
R. Acharya ,
Y. Q. Zhang  and
X. A. Cao
X. M. Li
Affiliation:
Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
R. Acharya
Affiliation:
Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
Y. Q. Zhang
Affiliation:
Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
X. A. Cao
Affiliation:
Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
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Abstract

The stability of green phosphorescent OLEDs with different structures was evaluated through constant-current stressing. Through the modifications of the ITO anode by different plasma treatments and the hole transport layer (HTL) by incorporating inorganic dopants, we proved that energy level misalignment at the ITO/HTL interface leads to localized joule heating, accelerating defect generation and luminescence decay. Pulsed current stressing was then employed to suppress the joule-heating effect so as to differentiate the thermal and nonthermal factors governing the device degradation. For OLEDs with a large energy barrier at the ITO/HTL interface, the effective lifetime was markedly increased under pulsed operation, whereas in OLEDs with an appropriate interfacial energy level alignment, pulsed stressing with 10% duty cycle only improved the effective half life by ∼15% as compared to continuous-wave stressing, indicating a minor role played by joule heating.

Keywords

organicthin filmphysical vapor deposition (PVD)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1792: Symposium CC/FF – Defects and Materials Issues in Semiconductors―Relationship to Optoelectronic Properties and Device Reliability , 2015 , mrss15-2128645
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Meng, H., Herron, N., in: Li, Z., Meng, H. (Eds.), Organic Light-Emitting Materials and Devices, Taylor & Francis, 2007, p. 295.Google Scholar
Aziz, H., Popovic, Z.D., Chem. Mater. 16 (2004) 4522.CrossRefGoogle Scholar
Xia, S.C., Kwong, R.C., Adamovich, V.I., Weaver, M.S., Brown, J.J., in: Proc. IEEE 45th Annual Int. Reliability Phys. Symp., 2007, p. 253.Google Scholar
Yamamoto, H., Adachi, C., Weaver, M.S., Brown, J.J., Appl. Phys. Lett. 100 (2012) 183306.CrossRefGoogle Scholar
Li, X.M. and Cao, X. A., Org. Electron. 14, 2523–2527 (2013).CrossRefGoogle Scholar
Murata, H., Merritt, C.D., Inada, H., Shirota, Y., Kafafi, Z.H., Appl. Phys. Lett. 75 (1999) 3252.CrossRefGoogle Scholar
Shen, J., Wang, D., Langlois, E., Barrow, W.A., Green, P.J., Tang, C.W., Shi, J., Synth. Met. 111–112 (2000) 233.CrossRefGoogle Scholar
Kondakov, D.Y., Lenhart, W.C., Nichols, W.F., J. Appl. Phys. 101 (2007) 024512.CrossRefGoogle Scholar
Giebink, N.C., D’Andrade, B.W., Weaver, M.S., Brown, J.J., Forrest, S.R., J. Appl. Phys. 105 (2009) 124514.CrossRefGoogle Scholar
Meneghini, M., Cester, A., Wrachien, N., Tazzoli, A., Zanoni, E., Meneghesso, G., D’Andrade, B., Esler, J., Xia, S., Brown, J., in: Proc. IEEE 47th Annual Int. Reliability Phys. Symp., 2009, p. 253.Google Scholar
Cao, X.A., Zhang, Y.Q., Appl. Phys. Lett. 100 (2012) 183304.CrossRefGoogle Scholar
Meerheim, R., Lussem, B., Leo, K., Proc. IEEE 97 (2009) 1606.CrossRefGoogle Scholar
Kröger, M., Hamwi, S., Meyer, J., Riedl, T., Kowalsky, W., Kahn, A., Org. Electron. 10 (2009) 932.CrossRefGoogle Scholar
Meyer, J., Hamwi, S., Schmale, S., Winkler, T., Johannes, H. H., Riedl, T. and Kowalsky, W., J. Mater. Chem.. (2009) 702.CrossRefGoogle Scholar
Li, X.M. and Cao, X. A., Org. Electron. 17, 9–14 (2015).CrossRefGoogle ScholarPubMed
Meyer, J., Hamwi, S., Kröger, M., Kowalsky, W., Riedl, T. and Kahn, A., Adv. Mater. 24 (2012) 5408.CrossRefGoogle Scholar