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Interface closure in the root region of steady deep-cellular growth in directional solidification

Published online by Cambridge University Press:  06 March 2015

J.-J. XU
Affiliation:
School of Material Science and Engineering, USTB, Beijing, 100083, China email: xu@math.mcgill.ca Department of Mathematics and Statistics, McGill University, Montreal, Quebec, H3A 0B9, Canada
Y.-Q. CHEN
Affiliation:
School of Science, Tianjin Chengjian University, Tianjin, 300384, China email: yonqiang@gmail.com

Abstract

The present paper investigates the mechanism of interface closure in the root region of the solutions for steady deep-cellular growth. This phenomenon is determined by a transcendentally small factor beyond all orders. It is found that the root region comprises three inner-inner regions; the inner system in the root region has a simple turning point, whose presence generates the so-called trapped-waves mechanism, which is responsible for the interface closure at the bottom of root. The quantization condition derived from the trapped-waves mechanism yields the eigenvalue that determines the location of interface closure and its dependence on the interfacial energy and other physical parameters.

Type
Papers
Copyright
Copyright © Cambridge University Press 2015 

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