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Implementation of CVD Diamond Growth Methods for Selective and Efficient Formation of Color-Centers in Diamond

Published online by Cambridge University Press:  16 March 2015

Stefano Gay
Affiliation:
Dept. Science and Chemical Technology, University Tor Vergata of Rome, Rome, Italy
Giacomo Reina
Affiliation:
Dept. Science and Chemical Technology, University Tor Vergata of Rome, Rome, Italy
Ilaria Cianchetta
Affiliation:
Dept. Science and Chemical Technology, University Tor Vergata of Rome, Rome, Italy
Emanuela Tamburri
Affiliation:
Dept. Science and Chemical Technology, University Tor Vergata of Rome, Rome, Italy
Mariglen Angjellari
Affiliation:
Dept. Science and Chemical Technology, University Tor Vergata of Rome, Rome, Italy
Maria Letizia Terranova
Affiliation:
Dept. Science and Chemical Technology, University Tor Vergata of Rome, Rome, Italy
Silvia Orlanducci
Affiliation:
Dept. Science and Chemical Technology, University Tor Vergata of Rome, Rome, Italy
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Abstract

We report here on the chemical methodologies that are being settled in our labs for the insertion in diamond of foreign atoms and consequent creation of fluorescent defects. The inclusion of Si, Cr, Ge, able to produce color centers, is directly obtained during the process of diamond synthesis by means of a CVD technique. The deposition of the diamond films takes place on substrates of different nature, treated following procedures specifically settled to control the insertion of the different species. The photoluminescence emission from a series of diamond samples grown on different substrates (Si, Ge and Ti) has been investigated and is discussed with reference to the morphological/structural features of the diamond phase and to the experimental procedures adopted for substrate preparation.

Type
Articles
Copyright
Copyright © Materials Research Society 2015 

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References

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