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Fabrication and characterization of chromium-chromium oxide-chromium metal-insulator-metal (MIM) tunnel junctions

Published online by Cambridge University Press:  25 November 2014

Nacer Debbar ,
Mohamed Syaryadhi  and
Mohamed Abdel-Rahman
Nacer Debbar*
Affiliation:
Electrical Engineering Department, College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia
Mohamed Syaryadhi
Affiliation:
Electrical Engineering Department, College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia
Mohamed Abdel-Rahman
Affiliation:
Prince Sultan Advanced Technologies Research Institute, College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia
*
ae-mail: nassdabb@gmail.com
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Abstract

In this paper, we present the fabrication and characterization of sputter deposited thin-film Cr-CrOx-Cr MIM diodes for application in millimeter wave detectors. The oxide layers were grown by thermal oxidation of the first deposited Cr electrode at 300 °C and at atmospheric pressure. The appreciable nonlinearity shown by these diodes confirms their viability in millimeter wave and infrared applications. The fabricated MIM structures exhibited sensitivity as high as 2.58 V−1 at Vbias of 0.3 V. Additionally, numerical integration of Simmons tunneling equations were utilized to extract the MIM diodes parameters. The correlation between the extracted parameters, the diodes performance and the fabrication conditions would be very valuable to effectively design and fabricate structures with improved performance.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 68 , Issue 3 , December 2014 , 30302
Copyright
© EDP Sciences, 2014

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