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Topological insulator nanostructures

Published online by Cambridge University Press:  15 October 2014

Seung Sae Hong ,
Desheng Kong  and
Yi Cui
Seung Sae Hong
Affiliation:
Department of Applied Physics, Stanford University, USA; seungsae@stanford.edu
Desheng Kong
Affiliation:
Department of Materials Science and Engineering, Stanford University, USA; desheng@stanford.edu
Yi Cui
Affiliation:
Department of Materials Science and Engineering, Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, USA; yicui@stanford.edu
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Abstract

Electrons in topological insulators possess unique electronic band structures and spin properties, promising a novel route to engineer material properties for electronics and energy science. Enhancing the surface state signal in electron transport is critical for both fundamental study of the surface states and future applications. Nanostructures of topological insulators naturally have large surface-to-volume ratios, effectively increasing the surface transport compared to the bulk contribution. Moreover, the unique morphology of topological insulator nanostructures results in various quantum effects of electronic states, which can tailor the surface band via quantum confinement. Here we review recent progress in topological insulator nanostructures. Material design and electron transport of topological insulator nanostructures are introduced, with an emphasis on the unique properties of nanostructures. A few examples of applications and future perspective in using these nanostructures are also discussed.

Keywords

electronic materialnanostructuremagneto resistance (transport)
Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 10: Topological Insulators , October 2014 , pp. 873 - 879
Copyright
Copyright © Materials Research Society 2014 

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