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Time-resolved analysis of charge responses determining luminescence properties

Published online by Cambridge University Press:  02 October 2014

Masashi Ishii
Masashi Ishii*
Affiliation:
Surface Physics and Structure Unit, Surface Physics Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan
*
a)Address all correspondence to this author. e-mail: ISHII.Masashi@nims.go.jp
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Abstract

To fabricate practical light-emitting devices, identification and minimization of nonradiative processes are necessary. In this study, an electrical measurement technique for time-resolved analyses of nonradiative processes was proposed. From the comparison between a commercial light-emitting diode (LED) and rare-earth-doped semiconductors, the technique, called electrical frequency-response analysis (FRA), revealed differences in the charge behaviors in the pn junction of bulk semiconductors and impurities. Although the charge response time constant on the order of a nanosecond realized effective recombination of the electron–hole pairs in a LED, the time constant larger than a microsecond still limited the emission intensity of the rare-earth-doped semiconductors such as Er-doped Si nanocrystals and GaAs with Er and O codopants. The energy-loss processes of the Er-doped semiconductors were investigated, and countermeasures to enhance the emission intensity were proposed.

Keywords

electrical propertiesluminescenceEr
Type
Invited Feature Papers
Information
Journal of Materials Research , Volume 29 , Issue 20 , 28 October 2014 , pp. 2366 - 2373
Copyright
Copyright © Materials Research Society 2014 

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Footnotes

This paper has been selected as an Invited Feature Paper.

References

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