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Femtosecond laser materials processing of a-Si:H below the ablation threshold

Published online by Cambridge University Press:  21 July 2014

B. Soleymanzadeh
Affiliation:
Molecular and Surface Physics, Bielefeld University, D-33615 Bielefeld, Germany
W. Beyer
Affiliation:
Institut für Silizium-Photovoltaik, HZB, Kekuléstrasse 5, D-12489 Berlin, Germany IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
F. Luekermann
Affiliation:
Molecular and Surface Physics, Bielefeld University, D-33615 Bielefeld, Germany
P. Prunici
Affiliation:
Solayer GmbH, Sachsenallee 28, D-01723 Kesselsdorf, Germany
W. Pfeiffer
Affiliation:
Molecular and Surface Physics, Bielefeld University, D-33615 Bielefeld, Germany
H. Stiebig
Affiliation:
Molecular and Surface Physics, Bielefeld University, D-33615 Bielefeld, Germany Institut für Innovationstransfer an der Universität Bielefeld, Universitätsstr. 25, D-33615 Bielefeld, Germany
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Abstract

Laser processing of thin-film silicon is a promising approach for the realization of polycrystalline silicon for large area electronics and solar cell applications. In this study we investigate the material modification of amorphous hydrogenated silicon (a-Si:H) with different hydrogen content (30%, 13% and <1%) by means of femtosecond (fs) laser pulses. Depending on the peak fluence applied, hydrogen diffusion/effusion, layer crystallization or material ablation can be achieved. Despite the low absorption coefficient of a-Si:H at the center wavelength of an amplified Titanium Sapphire laser at 790 nm a high local energy deposition close to the surface of the a-Si:H layer is observed, which can be attributed to a nonlinear absorption process.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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