Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-25T21:10:50.683Z Has data issue: false hasContentIssue false

Support Vector Machine Classification of Single Walled Carbon Nanotube Growth Parameters

Published online by Cambridge University Press:  18 June 2014

N. Westing
Affiliation:
Dept. of Electrical and Computer Engineering, Air Force Institute of Technology, 2950 Hobson Way Wright-Patterson AFB, OH 45433
J. Clark
Affiliation:
Dept. of Electrical and Computer Engineering, Air Force Institute of Technology, 2950 Hobson Way Wright-Patterson AFB, OH 45433
D. Hooper
Affiliation:
UES, Inc., 4401 Dayton-Xenia Rd. Dayton, Ohio 45432
P. Nikolaev
Affiliation:
UES, Inc., 4401 Dayton-Xenia Rd. Dayton, Ohio 45432
B. Maruyama
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, RXAS, Wright-Patterson AFB, OH 45433
Get access

Abstract

Selective single-walled carbon nanotube (SWNT) growth is a challenging problem, limiting their use in a wide variety of applications. Significant degrees of freedom in these experiments may lead to synthesis of multi-walled carbon nanotubes (MWNTs), which are less preferred. Thus, a method for constraining the synthesis results to only SWNTs is desired. A machine learning based approach for selectively growing SWNTs using a laser-induced chemical vapor deposition growth system is introduced. This approach models the complex relationships between the associated synthesis parameters to predict SWNT growth. The parameters under consideration include argon, ethylene, hydrogen and carbon dioxide partial pressures, growth temperature, and water vapor concentration. The catalyst consists of 10 nm of alumina and 1 nm of nickel deposited onto 10 µm diameter silicon pillars with a height of 10 µm. Determination of SWNT growth is performed through in-situ Raman spectroscopy using a 532 nm excitation laser. A total of 121 experiments are used to train a SWNT vs. MWNT classifier with a resulting model accuracy of 94.21%. The classifier model is applied to a range of simulated inputs, and the subset of these inputs that meet a >90% probability of SWNT growth are investigated further. The simulated inputs consist of 531,201,645 unique growth parameter combinations spanning the entire parameter space. A reduced dataset of 449,117 growth parameter combinations define 90% probability of SWNT growth according to the model. Randomly selected input parameters from this reduced dataset were tested experimentally, resulting in SWNT growth for all performed experiments validating the classifier model. This approach maps input growth conditions to SWNT growth selectivity using a limited set of experimental data and allows for further investigation into SWNT growth rates and chiral dependencies.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Dresselhaus, M.S., Dresselhaus, G. and Ecklund, P.C., Science of Fullerenes and Carbon Nanotubes, 802 (1996)Google Scholar
Kataura, H., Kimura, A., Ohtsuka, Y., Suzuki, S., Maniwa, Y., Hanyu, T. and Achiba, Y., Jpn. J, Appl. Phys. 37, L616 (1998)CrossRefGoogle Scholar
Zhu, H., Wei, J. Wang, K. Wu, D., Suenaga, K., J. Crystal Growth, 310, 5473 (2008)CrossRefGoogle Scholar
Reich, S., Robertson, J., Li, L.. “Control the chirality of carbon nanotubes by epitaxial growth”. Chemical Physics Letters, 421,469472 (2006)CrossRefGoogle Scholar
Rao, R., Cherukuri, T. Yakobson, B. Maruyama, B., Liptak, D.. “In situ evidence for chirality-dependent growth rates of individual carbon nanotubesNature Materials, 11, 213216 ( 2012)CrossRefGoogle ScholarPubMed
Grujicic, M., Gersten, B., Cao, G.. “Optimization of the chemical vapor deposition process for carbon nanotubes fabricationApplied Surface Science, 199, 90106 (2002)CrossRefGoogle Scholar
Puretky, A.A., Jesse, S. Ivanov, I.N. Eres, G., Geohegan, D.B.. “In situ measurements and modeling of carbon nanotube array growth kinetics during chemical vapor depositionApplied Physics, 81, 223240 (2005)CrossRefGoogle Scholar
Cortes, Corinna and Vapnik, Vladimir. “Support-vector networks”. Machine Learning, 20(3) 273297 (1995)CrossRefGoogle Scholar
Hall, M., Frank, E., Holmes, G., Pfahringer, B., Reutemann, P., Witten, I.. “The WEKA Mining Software: An UpdateSIGKDD Explorations, 11(1), (2009)CrossRefGoogle Scholar
Platt, J.. “Fast Training of Support Vector Machines using Sequential Minimal OptimizationAdvances in Kernel Methods – Support Vector Learning. (1998) (in press)Google Scholar
Balkanski, M., Wallis, R.F., and Haro, E.Anharmonic effects in light scattering due to optical phonons in siliconPhys Rev B 28, 1928 (1983)CrossRefGoogle Scholar