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Dielectric Morphology and RRAM Resistive Switching Characteristics

Published online by Cambridge University Press:  19 June 2014

G. Bersuker ,
B. Butcher ,
D. C. Gilmer ,
L. Larcher ,
A. Padovani ,
R. Geer  and
P. D. Kirsch
G. Bersuker*
Affiliation:
SEMATECH, Inc., Albany, NY 12203, USA
B. Butcher
Affiliation:
SEMATECH, Inc., Albany, NY 12203, USA
D. C. Gilmer
Affiliation:
SEMATECH, Inc., Albany, NY 12203, USA
L. Larcher
Affiliation:
DISMI, Universita di Modena e Reggio Emilia, Italy
A. Padovani
Affiliation:
DISMI, Universita di Modena e Reggio Emilia, Italy
R. Geer
Affiliation:
CNSE, U. Albany, NY 12203, USA
P. D. Kirsch
Affiliation:
SEMATECH, Inc., Albany, NY 12203, USA
*
*Email: Gennadi.Bersuker@SEMATECH.org
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Abstract

The connection between the bi-polar hafnia-based resistive-RAM (RRAM) operational characteristics and dielectric structural properties is considered. Specifically, the atomic-level description of RRAM, which operations involve the repeatable rupture/recreation of a localized conductive path, reveals that its performance is determined by the outcome of the initial forming process defining the structural characteristics of the conductive filament and distribution of the oxygen ions released from the filament region. The post-forming ions spatial distribution in the cell is found to be linked to a degree of dielectric oxygen deficiency, which may either assist or suppress the resistive switching processes.

Keywords

microelectronicsdefectsmemory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1691: Symposium BB – Materials for End-of-Roadmap Devices in Logic, Power and Memory , 2014 , mrss14-1691-bb03-03
Copyright
Copyright © Materials Research Society 2014 

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References

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