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Structural features and dopant gradients in Mg2SnXSi1-X ternary compounds

Published online by Cambridge University Press:  16 May 2014

E. Hatzikraniotis
Affiliation:
Solid State Physics Section, Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
G.S. Polymeris
Affiliation:
Solid State Physics Section, Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
C.B. Lioutas
Affiliation:
Solid State Physics Section, Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
A. Burkov
Affiliation:
IOFFE Physical and Technical Institute of the Russian Academy of Sciences, 194021 St Petersburg, Russia.
E-C. Stefanaki
Affiliation:
Solid State Physics Section, Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
A. Samunin
Affiliation:
IOFFE Physical and Technical Institute of the Russian Academy of Sciences, 194021 St Petersburg, Russia.
G. Isachenko
Affiliation:
IOFFE Physical and Technical Institute of the Russian Academy of Sciences, 194021 St Petersburg, Russia.
M.I. Fedorov
Affiliation:
IOFFE Physical and Technical Institute of the Russian Academy of Sciences, 194021 St Petersburg, Russia.
K.M. Paraskevopoulos
Affiliation:
Solid State Physics Section, Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
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Abstract

In the present work, a comparative study is attempted, dealing with the influence of the grain size distribution on the microstructure and the free carrier concentration in Mg2SnXSi1-X (x=0.2) ternary compounds doped with Sb. Structural in-homogeneities were monitored by using Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM) as well as Fourier transform infrared spectroscopy (FTIR) in the reflectivity mode.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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