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GaSb on Si: Structural Defects and Their Effect on Surface Morphology and Electrical Properties

Published online by Cambridge University Press:  17 February 2014

Shailesh Kumar Madisetti ,
Vadim Tokranov ,
Andrew Greene ,
Steven Novak ,
Michael Yakimov ,
Serge Oktyabrsky ,
Steven Bentley  and
Ajey P. Jacob
Shailesh Kumar Madisetti
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Vadim Tokranov
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Andrew Greene
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Steven Novak
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Michael Yakimov
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Serge Oktyabrsky
Affiliation:
SUNY College of Nanoscale Science and Engineering, Albany NY 12203, U.S.A.
Steven Bentley
Affiliation:
GLOBALFOUNDRIES at Albany NanoTech, Albany, NY 12203, U.S.A.
Ajey P. Jacob
Affiliation:
GLOBALFOUNDRIES at Albany NanoTech, Albany, NY 12203, U.S.A.
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Abstract

The paper reports on the growth of group III-Sb’s on silicon, substrate preparation, optimization of AlGaSb metamorphic buffer, formation of defects (threading dislocations, microtwins and anti-phase boundaries) and their effect on the surface morphology and electrical properties of these high hole mobility materials for future III-V CMOS technology. Defect density was found to be 2-3x higher than in similar structures grown on GaAs, resulting in 2x higher roughness. Defects also result in background p-type doping well above 1017 cm-3 causing inversion of polarity from n-type to p-type in thin n-type doped GaSb. MOS Capacitors fabricated on these buffers demonstrate similar characteristics to higher quality GaSb-on-GaAs. The highest hole mobility obtained in a strained InGaSb QW MOS channel grown on silicon is ∼630 cm2/V-s which is ∼30% lower than similar channels grown on GaAs substrates.

Keywords

III-Vmolecular beam epitaxy (MBE)Si
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 115 - 120
Copyright
Copyright © Materials Research Society 2014 

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References

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