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Discrete Gauge Fields for Graphene Membranes under Mechanical Strain

Published online by Cambridge University Press:  02 September 2013

James V. Sloan ,
Alejandro A. Pacheco Sanjuan ,
Zhengfei Wang ,
Cedric M. Horvath  and
Salvador Barraza-Lopez
James V. Sloan
Affiliation:
Department of Physics. University of Arkansas. Fayetteville, AR 72701, USA,
Alejandro A. Pacheco Sanjuan
Affiliation:
Departamento de Ingeniería Mecánica. Universidad del Norte. Barranquilla, Colombia,
Zhengfei Wang
Affiliation:
Department of Materials Science and Engineering. University of Utah. Salt Lake City, UT 84112, USA
Cedric M. Horvath
Affiliation:
Department of Physics. University of Arkansas. Fayetteville, AR 72701, USA,
Salvador Barraza-Lopez
Affiliation:
Department of Physics. University of Arkansas. Fayetteville, AR 72701, USA,
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Abstract

Mechanical strain creates strong gauge fields in graphene, offering the possibility of controlling its electronic properties. We developed a gauge field theory on a honeycomb lattice valid beyond first-order continuum elasticity. Along the way, we resolve a recent controversy on the theory of strain engineering in graphene: there are no K-point dependent gauge fields.

Keywords

electrical propertieselastic propertieselectronic structure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1549: Symposium P – Carbon Functional Nanomaterials, Graphene and Related 2D-Layered Systems , 2013 , pp. 31 - 34
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Meyer, J. C.; Geim, A. K.; Katsnelson, M. I.; Novoselov, K. S.; Booth, T. J.; Roth, S. Nature 446, 60 (2007).CrossRefGoogle Scholar
Bunch, J. S.; van der Zande, A. M.; Verbridge, S. S.; Frank, I. W.; Tanenbaum, D. M.; Parpia, J. M.; Craighead, H. G.; McEuen, P. L. Science 315, 490 (2007).CrossRefGoogle Scholar
Pereira, V. M.; Castro-Neto, A. H. Phys. Rev. Lett. 103, 046801 (2009).CrossRefGoogle Scholar
Guinea, F.; Katsnelson, M. I.; Geim, A. K. Nature Physics 6, 30 (2010).CrossRefGoogle Scholar
Kitt, A. L.; Pereira, V. M.; Swan, A. K.; Goldberg, B. B. Phys. Rev. B 85, 115432 (2012).CrossRefGoogle Scholar
Vozmediano, M. A. H.; Katsnelson, M. I.; Guinea, F. Phys. Rep. 496, 109 (2010).CrossRefGoogle Scholar
de Juan, F.; Sturla, M.; Vozmediano, M. Phys. Rev. Lett. 108, 227205 (2012).CrossRefGoogle Scholar
Suzuura, H.; Ando, T. Phys. Rev. B 65, 235412 (2002).CrossRefGoogle Scholar
Kim, K. S.; Zhao, Y.; Jang, H.; Lee, S. Y.; Kim, J. M.; Kim, K. S.; Ahn, J.-H.; Kim, P.; Choi, J.-Y.; Hong, B. H. Nature 457, 706 (2009).CrossRefGoogle Scholar
As of March of 2012, the highest reported magnetic field is of the order of 100 Tesla. See: http://www.magnet.fsu.edu/mediacenter/news/pressreleases/2012/100tshot.html Google Scholar
Levy, N.; Burke, S. A.; Meaker, K. L.; Panlasigui, M.; Zettl, A.; Guinea, F.; Castro-Neto, A. H.; Crommie, M. F. Science 329, 544 (2010).CrossRefGoogle Scholar
de Juan, F.; Cortijo, A.; Vozmediano, M. A. H. Phys. Rev. B 76, 165409 (2007).CrossRefGoogle Scholar
Choi, S.-M.; Jhi, S.-H.; Son, Y.-W. Phys. Rev. B 81, 081407 (2010).CrossRefGoogle Scholar
Sloan, J. V., Pacheco Sanjuan, A.A., Wang, Z., Horvath, C.M., and Barraza-Lopez, S., Phys. Rev. B 87, 155436 (2013).CrossRefGoogle Scholar
SBL, Pacheco-Sanjuan, A. A., Wang, Z., and Vanevic, M.. Solid State Comm. 166, 70 (2013).Google Scholar
de Juan, F., Mañes, J. L., Vozmediano, M. A. H., Phys.Rev. B 87, 165131 (2013).CrossRefGoogle Scholar
Kitt, A., Pereira, V. M., Swan, A. K., Goldberg, B. B., Phys. Rev. B 87, 159909(E) (2013).CrossRefGoogle Scholar