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Enhanced thermopower of GaN nanowires with transitional metal impurities

Published online by Cambridge University Press:  21 August 2013

G. A. Nemnes ,
Camelia Visan ,
T. L. Mitran ,
Adela Nicolaev ,
L. Ion  and
S. Antohe
G. A. Nemnes
Affiliation:
University of Bucharest, Faculty of Physics, ‘‘Materials and Devices for Electronics and Optoelectronics’’ Research Center, P.O. Box MG-11, 077125 Magurele-Ilfov, Romania
Camelia Visan
Affiliation:
‘‘Horia Hulubei’’ National Institute for Physics and Nuclear Engineering (IFIN-HH), 077126 Magurele-Ilfov, Romania
T. L. Mitran
Affiliation:
University of Bucharest, Faculty of Physics, ‘‘Materials and Devices for Electronics and Optoelectronics’’ Research Center, P.O. Box MG-11, 077125 Magurele-Ilfov, Romania
Adela Nicolaev
Affiliation:
University of Bucharest, Faculty of Physics, ‘‘Materials and Devices for Electronics and Optoelectronics’’ Research Center, P.O. Box MG-11, 077125 Magurele-Ilfov, Romania
L. Ion
Affiliation:
University of Bucharest, Faculty of Physics, ‘‘Materials and Devices for Electronics and Optoelectronics’’ Research Center, P.O. Box MG-11, 077125 Magurele-Ilfov, Romania
S. Antohe
Affiliation:
University of Bucharest, Faculty of Physics, ‘‘Materials and Devices for Electronics and Optoelectronics’’ Research Center, P.O. Box MG-11, 077125 Magurele-Ilfov, Romania
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Abstract

The thermopower properties of GaN nanowires with transitional metal impurities are investigated in the framework of constrained spin density functional theory (DFT) calculations. The nanowires are connected to nanoscopic Al[111] electrodes, which ensure a natural coupling to the wurtzite structure of the nanowires. We investigate the thermoelectric properties comparatively for the pristine GaN nanowire and the system with one Mn adatom. Our study points out the predicted qualitative behavior for systems with a peak in the total transmission, as well as the sign change in the thermopower. For the system with the magnetic impurity we find an enhanced conductance, thermopower and figure of merit. The detectable spin current polarization suggests the device structure may be also used in low temperature sensing applications.

Keywords

thermoelectricitynanostructurespintronic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1543: Symposium H – Nanoscale Thermoelectric Materials, Thermal and Electrical Transport, and Applications to Solid-State Cooling and Power Generation , 2013 , pp. 125 - 129
Copyright
Copyright © Materials Research Society 2013 

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References

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